Regulation of Transverse‑Mode Characteristics in Semiconductor Lasers Using High‑Order Surface Gratings

Gaohui Yuan; Yinli Zhou; Jingfei Mu; Jianwei Zhang; Chao Chen; Yumeng Pan; Zhuo Zhang; Tianjiao Liu; Jingjing Sun; Yuehui Xu; Yongqiang Ning; Lijun Wang

doi:10.3788/CJL241386

Chinese Journal of Lasers, Volume. 52, Issue 7, 0701007(2025)

Regulation of Transverse‑Mode Characteristics in Semiconductor Lasers Using High‑Order Surface Gratings

Gaohui Yuan^1,2, Yinli Zhou^1、*, Jingfei Mu^1,2, Jianwei Zhang¹, Chao Chen¹, Yumeng Pan³, Zhuo Zhang¹, Tianjiao Liu¹, Jingjing Sun^1,2, Yuehui Xu^1,2, Yongqiang Ning¹, and Lijun Wang¹

Author Affiliations

¹Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin , China

²University of Chinese Academy of Sciences, Beijing 100049, China

³NCO School, PLA Armored Corps Academy, Changchun 130033, Jilin , China

show less

Abstract Get PDF(in Chinese)

References(18)

[1] Belenky G L, Shterengas L, Kim J G et al. GaSb-based lasers for spectra region 2‒4 μm: challenges and limitations[J]. Proceedings of SPIE, 5732, 169-174(2005).

[2] Gaimard Q, Triki M, Nguyen-Ba T et al. Distributed feedback GaSb based laser diodes with buried grating: a new field of single-frequency sources from 2 to 3 µm for gas sensing applications[J]. Optics Express, 23, 19118-19128(2015).

[3] Pietrzak A, Zorn M, Huelsewede R et al. Development of highly-efficient laser diodes emitting around 1060 nm for medical and industrial applications[J]. Proceedings of SPIE, 10900, 109000K(2019).

[4] Yu C X, Shatrovoy O, Fan T Y et al. Diode-pumped narrow linewidth multi-kilowatt metalized Yb fiber amplifier[J]. Optics Letters, 41, 5202-5205(2016).

[5] Gross S, Coutts D W, Dubinskiy M et al. Beam shaping of a broad-area laser diode using 3D integrated optics[J]. Optics Letters, 44, 831-834(2019).

[6] Wang L J, Tong C Z, Wang Y J et al. Recent advances in lateral mode control technology of diode lasers[J]. Chinese Optics, 15, 895-911(2022).

[7] Lang R J, Larsson A G, Cody J G. Lateral modes of broad area semiconductor lasers: theory and experiment[J]. IEEE Journal of Quantum Electronics, 27, 312-320(1991).

[8] Bawamia A I, Eppich B, Paschke K et al. Experimental determination of the thermal lens parameters in a broad area semiconductor laser amplifier[J]. Applied Physics B, 97, 95-101(2009).

[9] Dai Z, Michalzik R, Unger P et al. Numerical simulation of broad-area high-power semiconductor laser amplifiers[J]. IEEE Journal of Quantum Electronics, 33, 2240-2254(1997).

[10] Winterfeldt M, Rieprich J, Knigge S et al. Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers[J]. Proceedings of SPIE, 9733, 97330O(2016).

[11] Wang L J, Tong C Z, Shu S L et al. Loss tailoring of high-power broad-area diode lasers[J]. Optics Letters, 44, 3562-3565(2019).

[12] Zhao S Y, Qi A Y, Wang M J et al. High-power high-brightness 980 nm lasers with >50% wall-plug efficiency based on asymmetric super large optical cavity[J]. Optics Express, 26, 3518-3526(2018).

[13] Man Y X, Zhong L, Ma X Y et al. Characteristic analysis of 975 nm tapered semiconductor lasers with separated contacts[J]. Chinese Journal of Lasers, 48, 1701005(2021).

[14] Piprek J. Inverse thermal lens effects on the far-field blooming of broad area laser diodes[J]. IEEE Photonics Technology Letters, 25, 958-960(2013).

[15] Stelmakh N. External-to-cavity lateral-mode harnessing devices for high-brightness broad-area laser diodes: concept, realizations, and perspectives[J]. Proceedings of SPIE, 7230, 72301B(2009).

[16] Eckstein H C, Zeitner U D, Ahmed K et al. Control of slow axis mode behaviour with waveguide phase structures in semiconductor broad-area lasers[J]. Proceedings of SPIE, 7953, 79531J(2011).

[17] Rong J M, Xing E B, Zhang Y et al. Low lateral divergence 2 μm InGaSb/AlGaAsSb broad-area quantum well lasers[J]. Optics Express, 24, 7246-7252(2016).

[18] Wang T, Tong C Z, Wang L J et al. Injection-insensitive lateral divergence in broad-area diode lasers achieved by spatial current modulation[J]. Applied Physics Express, 9, 112102(2016).

Tools

Get Citation

Copy Citation Text

Gaohui Yuan, Yinli Zhou, Jingfei Mu, Jianwei Zhang, Chao Chen, Yumeng Pan, Zhuo Zhang, Tianjiao Liu, Jingjing Sun, Yuehui Xu, Yongqiang Ning, Lijun Wang. Regulation of Transverse‑Mode Characteristics in Semiconductor Lasers Using High‑Order Surface Gratings[J]. Chinese Journal of Lasers, 2025, 52(7): 0701007

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: laser devices and laser physics

Received: Nov. 25, 2024

Accepted: Dec. 23, 2024

Published Online: Apr. 15, 2025

The Author Email: Yinli Zhou (zhouyinli@ciomp.ac.cn)

DOI:10.3788/CJL241386

CSTR:32183.14.CJL241386

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology