Chinese Journal of Lasers, Volume. 52, Issue 7, 0701007(2025)
Regulation of Transverse‑Mode Characteristics in Semiconductor Lasers Using High‑Order Surface Gratings
Fig. 1. Structural design of laser. (a) Schematic diagram; (b) refractive index distribution and light field distribution
Fig. 2. Experimental results. (a) Light field distribution within single grating period; (b) relationship between number of grating pairs and grating loss
Fig. 3. Regulatory effect of designed structure on lateral mode. (a) Transverse optical field distributions of different laser modes;
Fig. 4. Optical power and voltage versus operating current for lasers under continuous wave operating condition at room temperature
Fig. 5. Laser spectra
Fig. 6. Far-field divergence angles of laser under continuous current operating condition at room temperature. (a) Slow-axis divergence angle; (b) fast-axis divergence angle
Fig. 7. Near-field characteristics of lasers under continuous current operating condition at room temperature. (a) Bias current of 1 A; (b) bias current
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Gaohui Yuan, Yinli Zhou, Jingfei Mu, Jianwei Zhang, Chao Chen, Yumeng Pan, Zhuo Zhang, Tianjiao Liu, Jingjing Sun, Yuehui Xu, Yongqiang Ning, Lijun Wang. Regulation of Transverse‑Mode Characteristics in Semiconductor Lasers Using High‑Order Surface Gratings[J]. Chinese Journal of Lasers, 2025, 52(7): 0701007
Category: laser devices and laser physics
Received: Nov. 25, 2024
Accepted: Dec. 23, 2024
Published Online: Apr. 15, 2025
The Author Email: Yinli Zhou (zhouyinli@ciomp.ac.cn)
CSTR:32183.14.CJL241386