[5] [5] Astles M G, Shaw N, Blackmore G, et al. Improved Control of Composition and Electrical Properties of Liquid Phase Epitaxial (CdHg)Te Layers[J]. Journal of Crystal Growth, 1992, 117(1-4): 213-217.

[7] [7] Carmody M, Lee D, Zandian M, et al. Threading and Misfit-dislocation Motion in Molecular-beam Epitaxy[J]. Journal of Electronic Materials, 2003, 32(7): 710-716.

[8] [8] Brill G, Farrell S, Chen Y P, et al. Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing[J]. Journal of Electronic Materials, 2010, 39(7): 967-973.

[9] [9] Benson J D, Arrell S, Bill G, et al. Dislocation Analysis in (112)B HgCdTe/CdTe/Si[J]. Journal of Electronic Materials, 2011, 40(8): 1847-1853.

[10] [10] Farrell S, Rao M V, Brill G, et al. Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si[J]. Journal of Electronic Materials, 2011, 40(8): 1727-1732.

[11] [11] Simingalam S, Brill G, Wijewarnawuriya P, et al. Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si[J]. Journal of Electronic Materials, 2015, 44(5): 1321-1326.