Study on Dislocation Suppression of Silicon-Based HgCdTe Based on High- and Low-Temperature Cyclic Annealing Method

Meng-jia JIANG; Wei-lin SHE; Dan WANG; Zhen LI; Rui ZHOU; Chong-shang GUAN; Wei-rong XING; Jia-jia NIU

doi:10.3969/j.issn.1672-8785.2025.01.004

INFRARED, Volume. 46, Issue 1, 28(2025)

Study on Dislocation Suppression of Silicon-Based HgCdTe Based on High- and Low-Temperature Cyclic Annealing Method

Meng-jia JIANG, Wei-lin SHE, Dan WANG, Zhen LI, Rui ZHOU, Chong-shang GUAN, Wei-rong XING, and Jia-jia NIU

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The 11th Research Institute of China Electronics Technology Group Corporation, Beijing 100015, China

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JIANG Meng-jia, SHE Wei-lin, WANG Dan, LI Zhen, ZHOU Rui, GUAN Chong-shang, XING Wei-rong, NIU Jia-jia. Study on Dislocation Suppression of Silicon-Based HgCdTe Based on High- and Low-Temperature Cyclic Annealing Method[J]. INFRARED, 2025, 46(1): 28

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Received: May. 28, 2024

Accepted: Feb. 18, 2025

Published Online: Feb. 18, 2025

The Author Email:

DOI:10.3969/j.issn.1672-8785.2025.01.004

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology