Journal of Synthetic Crystals, Volume. 50, Issue 3, 484(2021)

Preparation and Electrical Properties of n-In0.35Ga0.65N/p-Si Heterojunction

WANG Ting1, ZHAO Hongli1, GUO Shiwei1, YAO Juan1, LI Shuang1, FU Yuechun1, SHEN Xiaoming1, and HE Huan2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    WANG Ting, ZHAO Hongli, GUO Shiwei, YAO Juan, LI Shuang, FU Yuechun, SHEN Xiaoming, HE Huan. Preparation and Electrical Properties of n-In0.35Ga0.65N/p-Si Heterojunction[J]. Journal of Synthetic Crystals, 2021, 50(3): 484

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jan. 4, 2021

    Accepted: --

    Published Online: Apr. 15, 2021

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics