InGaN film was deposited on p-Si substrate using a self-refited pulsed laser deposition (PLD) system with double laser light paths and two-component target. The microstructure of InGaN film and the electrical properties of n-InGaN/p-Si heterojunction were investigated. The results show that InGaN film exhibits a single crystal structure with ［0001］ preferred orientation.The surface of the film is smooth and dense, and the atomic content of In is 35%. The Hall effect measurements show that In0.35Ga0.65N film exhibits n-type characteristics with high carrier concentration, high mobility and low resistivity. The current-voltage (I-V) analysis shows that n-In0.35Ga0.65N/p-Si heterojunction has good rectification characteristics with the rectification ratio of 25 at ±4 V, and the open circuit voltage is 1.32 V. There exists two current transport mechanisms in n-In0.35Ga0.65N/p-Si heterojunction: thermally assisted carrier tunneling and recombination-tunneling mechanism. In addition, the reverse saturation current, barrier height and ideality factor of the heterojunction are 1.05×10-8A, 0.86 eV, and 6.87, respectively.