Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers

Qinghe Yuan; Hongqi Jing; Qiuyue Zhang; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.3788/LOP56.040003

Laser & Optoelectronics Progress, Volume. 56, Issue 4, 040003(2019)

Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers

Qinghe Yuan^1,2, Hongqi Jing¹, Qiuyue Zhang¹, Li Zhong¹, Suping Liu¹, and Xiaoyu Ma^1、*

¹ National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

² College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(14)

Fig. 1. Structural diagram of typical edge-emitting semiconductor laser

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Fig. 2. Research progress of high power semiconductor laser at 900-1000 nm

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Fig. 3. Schematic of semiconductor laser bar

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Fig. 4. Semiconductor laser array. (a) Horizontal array; (b) vertical array

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Fig. 5. High power semiconductor laser brilliance and Moore's law[66]

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Fig. 6. Output power and conversion efficiency of fiber-coupled semiconductor lasers produced by nLight versus wavelength

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Fig. 7. Structural diagram of nLight kilowatt fiber laser system for industrial applications

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Table 1. Output power of single-emitter semiconductor laser

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Table 1. Output power of single-emitter semiconductor laser

Year	Wavelength /nm	Power /W	Operationcondition	Conversionefficiency /%	Aperture /μm	Researchunit
2007	915	14.8	CW,15 ℃	64	100	Photonic DeviceResearch Center^[14]
2009	980	24.6	CW,cooling	54	96	Ferdinand-Braun-Institute^[15]
2013	915	19.8	CW,20 ℃	68	100	HamamastsuPhotonics K.K.^[16]
2013	915	15.0	CW	68	100	Ferdinand-Braun-Institute^[17]
2014	880	18.8	QCW	64	95	nLight^[18]
2015	950	20.0	CW	60	90	TRUMPFPhotonics^[19]
2015	920	29.5	CW	61	100	JDSU^[20]
2016	808	9.0	CW	63	140	Coherent^[21]
2017	808	8.0	CW	64	100	Jenoptik^[22]
2017	915	33.0	CW	60	220	Fujikura^[13]
Note:QCW is quasi-continuous work.

Table 2. Output power and conversion efficiency of semiconductor laser bar

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Table 2. Output power and conversion efficiency of semiconductor laser bar

Year	Wavelength /nm	Outputpower /W	Operationcondition	Conversionefficiency /%	Resonatorlength /mm	Fillfactor /%
2011	8xx	350	QCW,200 μs,100 Hz	62	5.0	80^[30]
2014	1020	200	CW,25 ℃	63	4.0	50^[27]
2017	940	600	QCW	>60	1.5	70^[35]
2015	940	1980	QCW,0.2 ms,10 Hz,203 K	57	6.0	72^[28]
2015	940	500	QCW,2 ms,10 Hz	>60	1.5	75^[31]
2015	760	100	CW	>60	4.0	30^[32]
2016	940	1000	QCW,1 ms,10 Hz,203 K	70	4.0	75^[33]
2016	808	80	CW	63	2.0	28^[21]
2017	80x	210	QCW,200 μs,20 Hz	70	5.0	72^[34]
2017	808	106	CW	68	1.5	50^[29]
2018	1060	500	QCW	75	2.0	76^[36]

Table 3. Parameters of Japanese Hamamatsu semiconductor laser bar module

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Table 3. Parameters of Japanese Hamamatsu semiconductor laser bar module

Product type	Wavelength /nm	Output power /W	Operation current /A	Beam quality factor atpulse peak of 1 /e^-2
L13713-25P940	940	10000	310	15°×58°
L11398-16P808	808	1600	105	10°×40°
L11398-16P940	940	1600	100	10°×40°

Table 4. Brightness overview of high-brightness wide stripe semiconductor laser

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Table 4. Brightness overview of high-brightness wide stripe semiconductor laser

Year	Wavelength /nm	Brilliance /(W·mm^-1·mrad^-1)	Research unit
2013	710	1.4	NUSOD institute^[41]
2014	969	3.5	FBH research institute^[43]
2014	970	2.5	Fraunhofer^[44]
2015	970	5.6	FBH research institute^[45]
2017	915	4.3	nLight^[46]

Table 5. Parameters of Laserline LDM and LDF series lasers

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Table 5. Parameters of Laserline LDM and LDF series lasers

Series	Wavelengthrange /nm	Maximum outputpower /kW	Beam quality /(mm·mrad)	Optical fiberdiameter /μm	Numericalaperture NA	Minimum focusat f=150 mm·μm^-1
		1.0	20	400	0.1	300
		2.5	30	600	0.1	450
LDM		3.5	40	400	0.2	600
		5.0	60	600	0.2	900
		6.0	100	1000	0.2	1500
		7.0	30	600	0.1	450
		9.0	40	400	0.2	600
LDF	900-1080	15	60	600	0.2	900
		20	100	1000	0.2	1500
		25	200	2000	0.2	3000

Table 6. Life of semiconductor laser single emitter

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Table 6. Life of semiconductor laser single emitter

Research unit	Year	Wavelength /nm	Life expectancy
Japanese Fujikura	2015	915	12 W,1.088×10⁶ h^[85]
Japanese Hamamatsu	2015	915	13 W, 25 ℃,6.8×10⁵ h^[86]
German Direct Photonics	2015	976	1×10⁵ h^[87]
Russian MIREA	2016	1060	6×10⁴ h^[88]
Japanese Mitsubishi Electrics	2018	976	1×10⁵ h^[89]

Table 7. Semiconductor laser bar life
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Table 7. Semiconductor laser bar life
Research unit Year Wavelength /nm Life expectancy
German Jenoptik 2015 940 200 W,2×10⁴ h^[90]
German Jenoptik 2017 808 24 ℃,100 A,140 W,2×10⁴ h^[91]
German Trumpf 2018 938 25 ℃,300 W,1×10⁴ h^[31]

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Qinghe Yuan, Hongqi Jing, Qiuyue Zhang, Li Zhong, Suping Liu, Xiaoyu Ma. Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040003

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