Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers

Qinghe Yuan; Hongqi Jing; Qiuyue Zhang; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.3788/LOP56.040003

Laser & Optoelectronics Progress, Volume. 56, Issue 4, 040003(2019)

Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers

Qinghe Yuan^1,2, Hongqi Jing¹, Qiuyue Zhang¹, Li Zhong¹, Suping Liu¹, and Xiaoyu Ma^1、*

¹ National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

² College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

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Qinghe Yuan, Hongqi Jing, Qiuyue Zhang, Li Zhong, Suping Liu, Xiaoyu Ma. Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040003

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Paper Information

Category: Reviews

Received: Jul. 30, 2018

Accepted: Sep. 10, 2018

Published Online: Jul. 31, 2019

The Author Email: Xiaoyu Ma (maxy@semi.ac.cn)

DOI:10.3788/LOP56.040003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology