Laser Technology, Volume. 48, Issue 6, 790(2024)

Research progress on high preformance mid-infrared antimonide semiconductor lasers

CAO Juntian1,2, YANG Cheng’ao1,2、*, CHEN Yihang1,2, YU Hongguang1,2, SHI Jianmei1,2, WANG Tianfang1,2, WEN Haoran1, WANG Zhiyuan1, GENG Zhengqi1, ZHANG Yu1,2, ZHAO Youwen1,2, WU Donghai1,2, XU Yingqiang1,2, NI Haiqiao1,2, and NIU Zhichuan1,2
Author Affiliations
  • 1State Key Laboratory for Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    CAO Juntian, YANG Cheng’ao, CHEN Yihang, YU Hongguang, SHI Jianmei, WANG Tianfang, WEN Haoran, WANG Zhiyuan, GENG Zhengqi, ZHANG Yu, ZHAO Youwen, WU Donghai, XU Yingqiang, NI Haiqiao, NIU Zhichuan. Research progress on high preformance mid-infrared antimonide semiconductor lasers[J]. Laser Technology, 2024, 48(6): 790

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    Paper Information

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    Received: Dec. 26, 2023

    Accepted: Feb. 13, 2025

    Published Online: Feb. 13, 2025

    The Author Email: YANG Cheng’ao (yangchengao@semi.ac.cn)

    DOI:10.7510/jgjs.issn.1001-3806.2024.06.003

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