Going through three important iterations, semiconductor material systems have been widely used in important fields such as microelectronics, communications, artificial intelligence, and carbon neutrality. With the rapid development of technologies, the research ona new generation of high-performance semiconductor materials and devices has become the focus of international anvanced technology. As one of the most promising fourth-generation semiconductor material, antimonide semiconductor materials have unique advantages andbroad application prospects in developingnext-generation high-performance, small-volume, low-power, and low-cost infrared optoelectronic devices. In this paper, the development process and research status of antimonide semiconductor lasers at home and abroad were reviewed, the key issues such as design of device structure, material epitaxial growth, mode selection and wavelength expansion were analyzed, high-performance antimonide quantum well lasers have been grown by molecular beam epitaxy technology. The design scheme and key technology for realizing high-power, single-mode and high-beam quality antimonide lasers were emphasized, and the research prospect of single-mode antimonide lasers with excellent characteristics such as low cost, high yield and high power was predicted.