Journal of Semiconductors, Volume. 46, Issue 3, 030401(2025)

Light and matter co-confined multi-photon lithography: an innovative way to break through the limits of traditional lithography

Jingyu Wang1, Zhanfeng Guo1, Zhu Wang2, Zhengwei Liu2, Daixuan Wu1、*, and He Tian1、**
Author Affiliations
  • 1School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
  • 2Jiangsu Fengbo Equipment Technology Co., Ltd, Wuxi 214000, China
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    Figures & Tables(3)
    (Color online) Schematic diagram of two-step-STED light confining mechanism for LMC-MPL (Energy level transitions include: 3hν three-photon absorption, IC internal conversion, VR vibrational relaxation and ISC inter-system crossing. Q: quencher, [Q]*: excited quencher, R*: free radical, Q–R: non-reactive adduct formed by free radicals and quencher)[1].
    (Color online) Three-dimensional woodpile structure made by MPL, MC-MPL, and LMC-MPL. (a)–(c) are taken perpendicular to the x–y plane (scale bar: 300 nm), while (d)–(f) are taken with the x–y plane tilted 45° (scale bar: 1 μm). With d = 300 nm, the lines of woodpile structure obtained by MPL cannot be separated. Therefore, the period is expanded to d = 700 nm (inset of (d) image) for MPL[1].
    (Color online) The original 3D model and fabricated SEM morphology of Nezha (40 μm in height) using Pr1 and Pr2. Scale bar: 10 μm. The hair lines of Nezha made by Pr2 are more clearly visible than that made by Pr1, which demonstrates that MC-MPL has a better ability to fabricate fine structures than MPL[1].
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    Jingyu Wang, Zhanfeng Guo, Zhu Wang, Zhengwei Liu, Daixuan Wu, He Tian. Light and matter co-confined multi-photon lithography: an innovative way to break through the limits of traditional lithography[J]. Journal of Semiconductors, 2025, 46(3): 030401

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    Paper Information

    Category: Research Articles

    Received: Nov. 21, 2024

    Accepted: --

    Published Online: Apr. 27, 2025

    The Author Email: Daixuan Wu (DXWu), He Tian (HTian)

    DOI:10.1088/1674-4926/24110023

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