Growth of 2-Inch Fe-Doped &#946;-Ga<sub>2</sub>O<sub>3</sub> Single Crystal with High Resistance and Properties of (010) Substrates

YAN Yuchao; WANG Cheng; LU Changcheng; LIU Yingying; XIA Ning; JIN Zhu; ZHANG Hui; YANG Deren

doi:10.16553/j.cnki.issn1000-985x.20241120.001

Journal of Synthetic Crystals, Volume. 54, Issue 2, 197(2025)

Growth of 2-Inch Fe-Doped β-Ga₂O₃ Single Crystal with High Resistance and Properties of (010) Substrates

YAN Yuchao^1,2, WANG Cheng³, LU Changcheng³, LIU Yingying³, XIA Ning³, JIN Zhu², ZHANG Hui^1,2、*, and YANG Deren^1,2

¹State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

²Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China

³Hangzhou Garen Semiconductor Company Limited, Hangzhou 311200, China

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YAN Yuchao, WANG Cheng, LU Changcheng, LIU Yingying, XIA Ning, JIN Zhu, ZHANG Hui, YANG Deren. Growth of 2-Inch Fe-Doped β-Ga₂O₃ Single Crystal with High Resistance and Properties of (010) Substrates[J]. Journal of Synthetic Crystals, 2025, 54(2): 197

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Paper Information

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Received: Aug. 29, 2024

Accepted: Mar. 31, 2025

Published Online: Mar. 31, 2025

The Author Email: ZHANG Hui (msezhanghui@zju.edu.cn)

DOI:10.16553/j.cnki.issn1000-985x.20241120.001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology