Fig. 1. Structure diagram of mid-/short-wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk material

Fig. 2. Schematic diagram of process flow

Fig. 3. Schematic diagram of device vertical profile（a）Anodic sulfuration+passivation，（b）direct SiO₂ passivation

Fig. 4. High-resolution X-ray diffraction（HRXRD）image of the device

Fig. 5. Optical microscope image of the sample surface (a) AFM image of the surface (b) and SEM image of the section(c)

Fig. 6. Curve of dark current density J and R∙A at different temperatures vs bias for sulfurized +SiO₂ passivated devices（a）and（c）and SiO₂ passivated devices（b）and（d）

Fig. 7. Curves of the dark current density（a）and R∙A value（b）of the device varying with temperature under bias voltage of -100 mV

Fig. 8. The data of R₀A changing with P/A value of devices with different mesa area at 77 K and its fitting curve

Fig. 9. Normalized spectral response curve of the device（a）short wave channel，（b）middle wave channel

Fig. 10. Blackbody spectral responsivity curve of the device