Using GaSb bulk and InAs/GaSb superlattice as short wave and medium wave infrared absorbing materials respectively, a short/mid dual-band infrared detectors with NIPPIN structure were epitaxial growth and fabricated. HRXRD and AFM tests show the FWHM of zero order peak of InAs/GaSb superlattice and GaSb peak are 17.57 arcsec and 19.15 arcsec, respectively. Surface root mean square roughness RMS is 1.82? under 10μm×10μm. At 77 K, the maximum product RA of resistance and area of SiO₂ passivated device is 5.58×105Ω?cm2, the dark current density is 5.27×10-7A?cm-2, and side wall resistivity is 6.83×106Ω?cm. After anodic sulfuration, the maximum RA of the device is 1.86×106Ω?cm2, the dark current density is 4.12×10-7A?cm-2, and side wall resistivity is 4.49×107Ω?cm. Sulfurization reduces dark current of the device by more than one order of magnitude and increases side wall resistivity by one order of magnitude under the same bias. The spectral response of the sulfurization device was tested, the device has the bais polarity-dependent dual-band detection performance with low crosstalk. The 50% cutoff wavelengths of the short-wave and medium-wave channels are 1.55μm and 4.62μm, respectively. At 1.44 μm, 2.7 μm and 4 μm,the responsivity are 0.415 A/W, 0.435 A/W and 0.337 A/W, respectively.