[1] [1] KUO C C. In situ time-resolved optical measurements of a-Si thin films during excimer laser crystallization[J].Optik, 2011,122(8): 655-659.

[2] [2] KUO C C. Phase transformation mechanism in pulsed excimer laser crystallization of amorphous silicon thin films[J]. Lasers in Engineering, 2010, 19 (3-4): 225-238.

[3] [3] LIU S L. Investigation in controlling longitudinal heat flow during the fabrication of poly-silicon thin film by ELC technique[J]. Science and Technology Innovation Herald,2010,32: 11-13.(in Chinese)

[4] [4] YIN L, CHEN W P,LIU X W, et al.. CMOS interface circuit for closed loop accelerometer[J]. Opt. Precision Eng., 2009, 17 (6): 1311-1315.(in Chinese)

[5] [5] ZHOU CH L,WANG W J,LI H L, et al.. Characterization of crystalline silicon solar cells by electrical parameters[J]. Opt. Precision Eng., 2008,16(7): 1163-1170.(in Chinese)

[6] [6] ZHAO X Q, LIU J R, YI A P, et al.. Amplification of high power short pulse excimer laser with beam smoothing[J].Opt. Precision Eng., 2011, 19(2): 397-406.(in Chinese)

[7] [7] XUE Q X, ZHAO X Q, HUA H Q, et al.. Seed beam smoothing for high power XeCl excimer laser system[J]. Opt. Precision Eng., 2011, 19(2): 332-339.(in Chinese)

[8] [8] KAKKAD R, CHOI B D. Enhancement of solid-phase crystallization kinetics of amorphous silicon by annealing in a high-pressure H2O ambient[J]. Journal of the Korean Physical Society, 2009, 55(1): 1-4.

[9] [9] JIN B J, Oh S J, KIM D H, et al.. Activation behavior of SLS and ELC poly-Si after ion shower doping [C]. IDW '06: Proceedings of the 13th International Display Workshops, 2006, 1-3: 769-772.

[10] [10] LIAO Y P, SHAO X B, GAO F L, et al.. Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon[J]. Chinese Physics, 2006,15(6): 1310-1314.

[11] [11] CHIKOGA S U, IBARAKI N. Low temperature poly-Si TFT-LCD by excimer laser anneal[J].Thin Solid Films,2001,383: 19-24.

[12] [12] SAMESHIMA T, KOHNO A, SEKIYA M, et al.. SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors[J].Appl.Phys.Lett,1994,64: 1018.

[13] [13] KUO Y, KOZLOWSKI P M. Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon[J]. Appl. Phys. Lett. 1996,69: 1092.

[14] [14] LEE S J, LEE S W, LEE K E, et al.. Electrical characterization of polycrystalline silicon thin film transistors crystallized by a new alignment sequential lateral solidification process[J].Phys.Scr.,2011,83: 055802.

[15] [15] SASAKI N, KITANARA K, YAMAMOTO K. Characterization of electrochemically-active defects in Si-film laser-crystallized with directional SLS by measuring the stress release during secco etching[C].Sid International Symposium Digest of Technical Papers., 2009,40(13): 632-635.

[16] [16] IM J S, KIM H J. On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films[J].Appl.Phys.Lett.,1994,64: 2303.

[17] [17] SPOSILIM R S, IM J S. Sequential lateral solidification of thin silicon films on SiO2[J]. J Appl.Phys, 1996,69(19): 2864-2866.

[18] [18] ZHANG J, ZHENG J,ZHANG Y SH. Fibonacci Quasi-periodic superstructure fiber bragg gratings[J]. Acta Photonica Sinica, 2009,38 (8): 2050-2054.(in Chinese)