Journal of Semiconductors, Volume. 42, Issue 12, 124101(2021)
Framework for TCAD augmented machine learning on multi- I–V characteristics using convolutional neural network and multiprocessing
Fig. 1. (Color online) (a) Diagram representing the workflow of generating the training samples. The simulations are distributed among workers using multiprocessing. Those workers are assigned to the different cores of the CPU and executed concurrently. (b) Structure of a FinFET used for the research. The tunable device parameters, along with their values, are: channel doping concentration (1017 cm–3), gate oxidation thickness (1 nm), and SD doping concentration (8 × 1019 cm–3). (c) Structure of the default NMOS used for the research. The process parameters that can be tuned as well as their default values are: N-well concentration (1017 cm–2), gate oxidation time (10 min), LDD dose (1014 cm–2) and LDD energy (30 keV).
Fig. 2. (Color online) Samples of a training dataset using planar NMOS. Each line represents one curve of a training sample. Five distinct NMOS characteristics are simulated and used: (a)
Fig. 3. (Color online) (a) Neural network architecture used for mapping the characteristics of a device to the process parameters. The 13 input channels are composed of the five current characteristics, the voltage of the off-state breakdown curve (when simulating the breakdown curve, the current is set and the voltage is therefore variable, in contrast to the other voltage characteristics), their logarithmic counterpart as well as the index values. (b) Scatter plots representing the values predicted by the network (
Fig. 4. (Color online) (a) Neural network architecture used for mapping the process or device parameters to its electrical characteristics. (b) Training curves for the predictions of characteristics using different numbers of training samples.
Fig. 5. (Color online) (a) Plots representing NMOS characteristics predicted by the network (solid line) versus the actual values (dotted line) of three samples from the validation dataset. The samples were not previously seen by the network. (b) Prediction of characteristics with three parameters fixed and the N-well concentration spread evenly over its range of value. The gate oxidation time, LDD Dose and LDD Energy are set at 12.5 min,
Fig. 6. Structure of a classical autoencoder. The input (
Fig. 7. (Color online) (a) Scatter plots representing the values predicted (
Fig. 8. (Color online) (a) Study of the neural network loss when predicting characteristics. Several numbers of samples and ranges have been tested. The curves are averaged over seven sets of training for 2000 epochs. (b) The statistical parameters used for the study. The process parameter ranges are uniform distributions bounded by: Mean × (1 ± Sigma).
Fig. 9. (Color online) Neural network loss for predicting characteristics versus the numbers of samples used for training. The different curves represent the number of parameters that are randomized when generating the training set (e.g., for the “1 Parameter” curve, all the parameters except the N-well concentration are fixed). The parameters were added in the following order: N-well concentration, gate oxidation time, LDD dose, and LDD energy. The curves are averaged over seven sets of training for 2000 epochs.
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Thomas Hirtz, Steyn Huurman, He Tian, Yi Yang, Tian-Ling Ren. Framework for TCAD augmented machine learning on multi- I–V characteristics using convolutional neural network and multiprocessing[J]. Journal of Semiconductors, 2021, 42(12): 124101
Category: Articles
Received: Apr. 6, 2021
Accepted: --
Published Online: Dec. 14, 2021
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