Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

Xiongliang Wei; Syed Ahmed Al Muyeed; Haotian Xue; Elia Palmese; Renbo Song; Nelson Tansu; Jonathan J. Wierer

doi:10.1364/PRJ.441122

Photonics Research, Volume. 10, Issue 1, 33(2022)

Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

Xiongliang Wei^1、*, Syed Ahmed Al Muyeed¹, Haotian Xue¹, Elia Palmese¹, Renbo Song¹, Nelson Tansu^2,3,4, and Jonathan J. Wierer^1,5

Author Affiliations

¹Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA

²School of Electrical and Electronic Engineering, The University of Adelaide, Adelaide, SA 5005, Australia

³Institute for Photonics and Advanced Sensing, The University of Adelaide, Adelaide, SA 5005, Australia

⁴e-mail: nelson.tansu@adelaide.edu.au

⁵e-mail: jjwierer@ncsu.edu

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Xiongliang Wei, Syed Ahmed Al Muyeed, Haotian Xue, Elia Palmese, Renbo Song, Nelson Tansu, Jonathan J. Wierer, "Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates," Photonics Res. 10, 33 (2022)

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Paper Information

Category: Optoelectronics

Received: Aug. 23, 2021

Accepted: Oct. 25, 2021

Published Online: Dec. 9, 2021

The Author Email: Xiongliang Wei (xiw314@lehigh.edu)

DOI:10.1364/PRJ.441122

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology