Researching | Transient radiation response of SOI transistors and SOI devices

NUCLEAR TECHNIQUES, Volume. 47, Issue 4, 040402(2024)

Transient radiation response of SOI transistors and SOI devices

Chuanhua DU, Binghuang DUAN^*, Cen XIONG, and Chao ZENG

Author Affiliations

Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China

show less

Abstract Get PDF(in Chinese)

Figures&Tables (13)

References (21)

Paper Information

References(21)

[1] Hubert G, Cavoli P L, Federico C et al. Effect of the radial ionization profile of proton on SEU sensitivity of nanoscale SRAMs[J]. IEEE Transactions on Nuclear Science, 62, 2837-2845(2015).

[2] Rodbell K P, Heidel D F, Tang H H K et al. Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells[J]. IEEE Transactions on Nuclear Science, 54, 2474-2479(2007).

[3] Raine M, Hubert G, Gaillardin M et al. Impact of the radial ionization profile on SEE prediction for SOI transistors and SRAMs beyond the 32-nm technological node[J]. IEEE Transactions on Nuclear Science, 58, 840-847(2011).

[4] Liu M S, Liu H Y, Brewster N et al. Limiting upset cross sections of SEU hardened SOI SRAMs[J]. IEEE Transactions on Nuclear Science, 53, 3487-3493(2006).

[5] Sierawski B D, Mendenhall M H, Reed R A et al. Muon-induced single event upsets in deep-submicron technology[J]. IEEE Transactions on Nuclear Science, 57, 3273-3278(2010).

[6] Brady F T, Scott T, Brown R et al. Fully-depleted submicron SOI for radiation hardened applications[J]. IEEE Transactions on Nuclear Science, 41, 2304-2309(1994).

[7] DU Chuanhua, ZHAO Hongchao, DENG Yan. Latent damage in 0.13 μm large scale integrated circuit from transient latchup test[J]. Atomic Energy Science and Technology, 53, 2498-2503(2019).

[8] WANG Haiyang, ZHENG Qiwen, CUI Jiangwei et al. Damage law and mechanism of total dose of PDSOI transistors with different channel lengths caused by backgate bias[J]. Nuclear Techniques, 45, 050502(2022).

[9] Gao L B, Du C H, Bu J H et al. A transient ionizing radiation SPICE model for PDSOI MOSFET[J]. Microwave and Optical Technology Letters, 63, 2103-2107(2021).

[10] Habing D H. The use of lasers to simulate radiation-induced transients in semiconductor devices and circuits[J]. IEEE Transactions on Nuclear Science, 12, 91-100(1965).

[11] Ellis T D, Kim Y D. Use of a pulsed laser as an aid to transient upset testing of I2L LSI microcircuits[J]. IEEE Transactions on Nuclear Science, 25, 1489-1493(1978).

[12] Nikiforov A Y, Skorobogatov P K. Dose rate laser simulation tests adequacy: shadowing and high intensity effects analysis[J]. IEEE Transactions on Nuclear Science, 43, 3115-3121(1996).

[13] Hardman M A, Edwards A R. Exploitation of a pulsed laser to explore transient effects on semiconductor devices[J]. IEEE Transactions on Nuclear Science, 31, 1406-1410(1984).

[14] LIANG Kun, SUN Peng, LI Mo et al. Laser simulation technology research of transient dose rate effect in SOI device[J]. Atomic Energy Science and Technology, 51, 187-192(2017).

[15] Cardoza D, LaLumondiere S D, Tockstein M A et al. Comparison of single event transients generated by short pulsed X-rays, lasers and heavy ions[J]. IEEE Transactions on Nuclear Science, 61, 3154-3162(2014).

[16] Yu Y T, Han J W, Feng G Q et al. Correction of single event latchup rate prediction using pulsed laser mapping test[J]. IEEE Transactions on Nuclear Science, 62, 565-570(2015).

[17] Alexander D R. Transient ionizing radiation effects in devices and circuits[J]. IEEE Transactions on Nuclear Science, 50, 565-582(2003).

[18] Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R et al. Radiation effects in SOI technologies[J]. IEEE Transactions on Nuclear Science, 50, 522-538(2003).

[19] Ferlet-Cavrois V, Gasiot G, Marcandella C et al. Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations[J]. IEEE Transactions on Nuclear Science, 49, 2948-2956(2002).

[20] GUO Tianlei, ZHAO Fazhan, HAN Zhengsheng et al. Critical charge definition for PDSOI CMOS SRAM[J]. Chinese Journal of Electron Devices, 30, 1133-1136(2007).

[21] Nation S A. Pulsed laser irradiation for discrete component dose-rate model development[D](2007).

Tools

Get Citation

Copy Citation Text

Chuanhua DU, Binghuang DUAN, Cen XIONG, Chao ZENG. Transient radiation response of SOI transistors and SOI devices[J]. NUCLEAR TECHNIQUES, 2024, 47(4): 040402

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Research Articles

Received: Jul. 23, 2023

Accepted: --

Published Online: May. 28, 2024

The Author Email: Binghuang DUAN (段丙皇)

DOI:10.11889/j.0253-3219.2024.hjs.47.040402

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology