Fig. 1. Layout of the tested device

Fig. 2. Photocurrent I_DS vs. drain-source voltage V_DS irradiated with different laser energies for the three types of transistors

Fig. 3. Waveform of measured photocurrent I_DS of drain-source under different laser energies for two types of transistors(a) 0.35 μm SOI NMOS, (b) 0.35 μm Si NMOS

Fig. 4. MCU test circiut

Fig. 5. Block diagram of gamma dose rate test method for MCU circuit

Fig. 6. Transient dose rate radiation response of the square wave signal of an MCU circuit (dose rate: 4.2×10¹¹ rad(Si)·s^-1)

Fig. 7. Transient source current of an MCU circuit(dose rate: 4.2×10¹¹ rad(Si)·s^-1)

Fig. 8. Transient dose rate response of the 3.3 V MCU voltage (dose rate: 4.2×10¹¹ rad(Si)·s^-1)

Fig. 9. Transient dose rate response of the 1.2 V MCU voltage (dose rate: 4.2×10¹¹ rad(Si)·s^-1)

Fig. 10. Transient dose rate response of an oscillator voltage (dose rate: 4.2×10¹¹ rad(Si)·s^-1)

Fig. 11. Test results of logic states of a trigger flip-flop chain after gamma irradiation

Fig. 12. Schematic diagram of sensitive charge collect volume for bulk Si (a) and SOI MOS (b)