[1] [1] CASADY J B, JOHNSON R W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review［J］. Solid-State Electronics, 1996, 39(10): 1409-1422.

[2] [2] MORKO H, STRITE S, GAO G B, et al. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies［J］. Journal of Applied Physics, 1994, 76(3): 1363-1398.

[3] [3] EDDY C R Jr, GASKILL D K. Materials science. Silicon carbide as a platform for power electronics［J］. Science, 2009, 324(5933): 1398-1400.

[4] [4] LEE T, BHUNIA S, MEHREGANY M. Electromechanical computing at 500 ℃ with silicon carbide［J］. Science, 2010, 329 (5997): 1316-1318．

[6] [6] KURODA N, SHIBAHARA K, YOO W, et al. Step controlled VPE growth of SiC single crystals at low temperatures［M］. Tokyo: Extended Abstract 19th Conference on Solid State Devices and Materials: 1987.

[7] [7] UEDA T, NISHINO H, MATSUNAMI H. Crystal growth of SiC by step-controlled epitaxy［J］. Journal of Crystal Growth, 1990, 104(3): 695-700.

[8] [8] KONG H, KIM H J, EDMOND J A, et al. Growth, doping, device development and characterization of CVD beta-SiC epilayers on Si(100) and alpha-SiC(0001)［J］. MRS Online Proceedings Library, 1987, 97(1): 233-245.

[9] [9] LEONE S, HENRY A, JANZN E, et al. Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates［J］. Journal of Crystal Growth, 2013, 362: 170-173.

[10] [10] CHOKAWA K, DAIGO Y, MIZUSHIMA I, et al. First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC (0001) surface under conventional CVD and Halide CVD environments［J］. Japanese Journal of Applied Physics, 2021, 60(8): 085503.

[11] [11] HENRY A, LEONE S, BEYER C, et al. SiC epitaxy growth using chloride-based CVD ［J］. Physica B, 2012, 407(10): 1467-1471.

[12] [12] LEONE S, MAUCERI M, PISTONE G. et al. SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor ［J］．Materials Science Forum, 2006, 527-529: 179-182.

[13] [13] DEIVENDRAN B, SHINDE V M, KUMAR H, et al. 3D Modeling and optimization of SiC deposition from CH3SiCl3/H2 in a commercial hot wall reactor［J］. Journal of Crystal Growth, 2021, 554: 125944.

[15] [15] THOMAS B, HECHT C, STEIN R A, et al. Challenges in large-area multi-wafer SiC epitaxy for production needs［J］. Materials Science Forum, 2006, 55(527/528/529): 135-140.

[20] [20] LA VIA F, GALVAGNO G, FOTI G, et al. 4H SiC epitaxial growth with chlorine addition［J］. Chemical Vapor Deposition: CVD, 2006, 12(8/9): 509-515.

[21] [21] ISHIDA Y, TAKAHASHI T, OKUMURA H, et al. Development of a practical high-rate CVD system［J］. Mater Sci Forum, 2008, 600-603: 119-122．

[22] [22] DAIGO Y, WATANABE T, ISHIGURO A, et al. Impact of precise temperature control for 4H-SiC epitaxy on large diameter wafers［C］//2020 International Symposium on Semiconductor Manufacturing (ISSM). December 15-16, 2020, Tokyo, Japan. IEEE, 2021: 1-4.

[23] [23] MITROVIC B, GURARY A, KADINSKI L. On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters［J］. Journal of Crystal Growth, 2006, 287(2): 656-663.

[24] [24] SCHNER A. New development in hot wall vapor phase epitaxial growth of silicon carbide［J］. Silicon Carbide, 2004: 229-250.

[25] [25] DAIGO Y, ISHII S, KOBAYASHI T. Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD［J］. Japanese Journal of Applied Physics, 2019, 58(SB): SBBK06.

[27] [27] DAIGO Y, WATANABE T, ISHIGURO A, et al. Reduction of harmful effect due to by-product in CVD reactor for 4H-SiC epitaxy［C］//2020 International Symposium on Semiconductor Manufacturing (ISSM). December 15-16, 2020, Tokyo, Japan. IEEE, 2021: 1-4.