Journal of Synthetic Crystals, Volume. 52, Issue 5, 918(2023)
Epitaxial Growth Study of n-Type 4H-SiC Films by High-Speed Wafer Rotation Vertical Hot-Wall CVD Equipment
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HAN Yuebin, PU Yong, SHI Jianxin, YAN Honglei. Epitaxial Growth Study of n-Type 4H-SiC Films by High-Speed Wafer Rotation Vertical Hot-Wall CVD Equipment[J]. Journal of Synthetic Crystals, 2023, 52(5): 918
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Received: Feb. 20, 2023
Accepted: --
Published Online: Jun. 11, 2023
The Author Email: HAN Yuebin (hanshan@sicentury.com)
CSTR:32186.14.
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