High-speed wafer rotation vertical hot-wall chemical vapor deposition (CVD) was employed to conduct home-epitaxial growth on n-type 〈1010〉 4° off-angel 4H-SiC wafer. With temperature of 1 650 ℃, pressure of 250 mbar and rotation rate of 600 r/min, growth rate of over 40.44 μm/h was achieved, epi-layer with thickness uniformity of 1.37% and doping concentration uniformity of 2.79% was obtained. AFM testing indicates that the surface roughness is 0.11 nm. Leica microscope indicates that the surface of epilayer is smooth and no macro-step existing, the sharp Raman lines show typical features of 4H-SiC, and defect density is very low. Comprehensive analysis shows that high-quality SiC epilayer is obtained with high growth rate by national high-speed wafer rotation vertical hot-wall CVD equipment. This research provides some guidance for current SiC epitaxial industry development and equipment localization.