Effects of Atmospheric Pressure Plasma Electrode Structure on Silicon Carbide Removal Function

Song Li; Dun Aihuan; Wang Zhe; Wu Lunzhe; Peng Bing; Xu Xueke

doi:10.3788/CJL202047.1002002

Chinese Journal of Lasers, Volume. 47, Issue 10, 1002002(2020)

Effects of Atmospheric Pressure Plasma Electrode Structure on Silicon Carbide Removal Function

Song Li^1,2, Dun Aihuan¹, Wang Zhe¹, Wu Lunzhe¹, Peng Bing^1,2, and Xu Xueke^1、*

¹Precision Optical Manufacturing and Testing Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(17)

Fig. 1. APPP system experimental device

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Fig. 2. APPP process

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Fig. 3. APPP removal function

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Fig. 4. Effect of electrode tip radius on maximum electric field intensity

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Fig. 5. Schematic of electrode structure

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Fig. 6. Removal function corresponding to different electrodes

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Fig. 7. Effect of He flow rate on removal function

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Fig. 8. Effect of CF₄ flow rate on removal function

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Fig. 9. Effect of O₂ flow rate on removal function

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Fig. 10. Effect of input power on removal function

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Fig. 11. Surface shape of S-SiC before and after processing. (a) Before processing; (b) after processing

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Table 1. Removal function corresponding to different electrodes
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Table 1. Removal function corresponding to different electrodes
Electrode MRR /nm FWHM /mm
1 963 2.01
2 482 2.17
3 312 3.16
4 208 3.57
5 225 3.68

Table 2. Processing parameters when He flow rate is variable
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Table 2. Processing parameters when He flow rate is variable
Parameter Value
He flow rate /(L·min^-1) 1,1.5,2,3,4,5
CF₄ flow rate /(mL·min^-1) 10
O₂ flow rate /(mL·min^-1) 5
Input power P /W 40

Table 3. Processing parameters when CF₄ flow rate is variable
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Table 3. Processing parameters when CF₄ flow rate is variable
Parameter Value
He flow rate /(L·min^-1) 5
CF₄ flow rate /(mL·min^-1) 0,5,10,15,20,25
O₂ flow rate /(mL·min^-1) 5
Input power P /W 40

Table 4. Processing parameters when O₂ flow rate is variable
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Table 4. Processing parameters when O₂ flow rate is variable
Parameter Value
He flow rate /(L·min^-1) 5
CF₄ flow rate /(mL·min^-1) 10
O₂ flow rate /(mL·min^-1) 0,5,10,15,20,25
Input power P /W 40

Table 5. Processing parameters when input power is variable
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Table 5. Processing parameters when input power is variable
Parameter Value
He flow rate /(L·min^-1) 5
CF₄ flow rate /(mL·min^-1) 10
O₂ flow rate /(mL·min^-1) 5
Input power P /W 30,35,40,45,50,55

Table 6. Process parameters and removal function used in APPP processing S-SiC
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Table 6. Process parameters and removal function used in APPP processing S-SiC
Parameter Value
He flow rate /(L·min^-1) 5
CF₄ low rate /(mL·min^-1) 10
O₂ flow rate /(mL·min^-1) 5
Input power P /W 40
MRR /nm 315
FWHM /mm 3.17

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Song Li, Dun Aihuan, Wang Zhe, Wu Lunzhe, Peng Bing, Xu Xueke. Effects of Atmospheric Pressure Plasma Electrode Structure on Silicon Carbide Removal Function[J]. Chinese Journal of Lasers, 2020, 47(10): 1002002

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