Chinese Journal of Lasers, Volume. 31, Issue 12, 1469(2004)

Effect of Absorption Character to the Reflectance of 193 nm HfO2/SiO2, Y2O3/SiO2 and Al2O3/SiO2 Multilayer Thin Films

[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    References(8)

    [1] [1] O. Apel, K. Mann, J. Heber et al.. Nonlinear absorption phenomena in oxide coatings for 193 nm [C]. SPIE, 1999, 3902:235~241

    [2] [2] O. Apel, K. Mann, A. Zoeller et al.. Nonlinear absorption of thin Al2O3 films at 193 nm [J]. Appl. Opt., 2000, 39(18):3165~3169

    [3] [3] J. Ferre-Borrull, A. Duparre, E. Quesnel. Roughness and light scattering of ion-beam-sputtered fluoride coatings for 193 nm [J]. Appl. Opt., 2000, 39(31):5854~5864

    [4] [4] S. Gliech, J. Steinert, A. Duparre. Light-scattering measurements of optical thin-film components at 157 and 193 nm [J]. Appl. Opt., 2002, 41(16):3224~3235

    [5] [5] A. Duparre, R. Thielsch, N. Kaiser et al.. Surface finish and optical quality of CaF2 for UV-lithography applications [C]. SPIE, 1998, 3334:1048~1054

    [7] [7] G. P. Callahan, B. K. Flint. Characteristics of deep UV optics at 193 nm & 157 nm [C]. SPIE, 1998, 3578:45~53

    [8] [8] F. Rainer, W. Howard Lowdermilk, D. Milam et al.. Materials for optical coatings in the ultraviolet [J]. Appl. Opt., 1985, 24(4):496~500

    [9] [9] E. Welsch, K. Ettrich, H. Blaschke et al.. Investigation of the absorption induced damage in ultraviolet dielectric thin films [J]. Opt. Eng., 1997, 36(2):504~514

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of Absorption Character to the Reflectance of 193 nm HfO2/SiO2, Y2O3/SiO2 and Al2O3/SiO2 Multilayer Thin Films[J]. Chinese Journal of Lasers, 2004, 31(12): 1469

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    Paper Information

    Category: materials and thin films

    Received: Jun. 19, 2003

    Accepted: --

    Published Online: Jun. 12, 2006

    The Author Email: (seajing@opfilm.com)

    DOI:

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