Microelectronics, Volume. 51, Issue 3, 382(2021)

Research Advancement on Interface Passivation of SiC MOSFETs

ZHU Hao1,2, ZHANG Jing1, LI Pengfei1, and YUAN Shu2
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    ZHU Hao, ZHANG Jing, LI Pengfei, YUAN Shu. Research Advancement on Interface Passivation of SiC MOSFETs[J]. Microelectronics, 2021, 51(3): 382

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    Paper Information

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    Received: Oct. 13, 2020

    Accepted: --

    Published Online: Mar. 11, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.200477

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