[1] [1] V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan et al.. Absorption and emission of hexagonal InN. evidence of narrow fundamental band gap［J］. Phys. Status Solidi (b), 2002, 229(3): R1～R3

[2] [2] J. Wu, W. Walukiewicz, K. M. Yu et al.. Unusual properties of the fundamental band gap of InN［J］. Appl. Phys. Lett., 2002, 80(21): 3967～3969

[3] [3] B. E. Foutz, S. K. OpLeary, M. S. Shur et al.. Transient electron transport in wurtzite GaN, InN, and AlN［J］. J. Appl. Phys., 1999, 85(11): 7727～7734

[4] [4] M. Bockowski. High pressure direct synthesis of Ⅲ-Ⅴ nitrides［J］. Phys. B, 1999, 265(1-4): 1～5

[5] [5] M. Higashiwaki, T. Matsui. High quality InN film growth on a low temperature grown GaN intermediate layer by plasma assisted molecular beam epitaxy［J］. Jpn. J. Appl. Phys., Part 2, 2002, 41(5B): L540～L542

[6] [6] I. Mahboob, T. D. Veal, C. F. McConville et al.. Intrinsic electron accumulation at clean InN surfaces［J］. Phys. Rev. Lett., 2004, 92(3): 036804

[7] [7] K. Sugita, K. Sasamoto, A. Hashimoto et al.. Effects of Cp2Mg supply on MOVPE growth behavior of InN［J］. Phys. Status Solidi, 2011, C8(7-8): 2506～2508

[8] [8] P. Fewster. X-Ray Scattering from Semiconductors［M］. London: Imperial College Press, 2000

[9] [9] R. Chierchia, T. Bottcher, H. Heinke et al.. Microstructure of heteroepitaxial GaN revealed by X-ray diffraction［J］. J. Appl. Phys., 2003, 93(11): 8918～8925

[10] [10] V. Srikant, J. S. Speck, D. R. Clarke. Mosaic structure in epitaxial thin films having large lattice mismatch［J］. J. Appl. Phys., 1997, 82(9): 4286～4296

[11] [11] Y. J. Sun, O. Brandt, T. Y. Liu et al.. Determination of the azimuthal orientational spread of GaN films by X-ray diffraction［J］. Appl. Phys. Lett., 2002, 81(26): 4928～4930

[12] [12] T. Metzger, R. Hopler, E. Born et al.. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry［J］. Philosophical Magazine A, 1998, 77(4): 1013～1025

[13] [13] Th. de Keijser, E. J. Mittemeijer, H. C. F. Rozendaal. The determination of crystallite-size and lattice-strain parameters in conjunction with the profile-refinement method for the determination of crystal structures［J］. J. Appl. Cryst., 1983, 16(3): 309～316

[14] [14] B. Liu, R. Zhang, Z. L. Xie et al.. Microstructure and dislocation of epitaxial InN films revealed by high resolution X-ray diffraction［J］. J. Appl. Phys., 2008, 103(2): 023504

[15] [15] J. Gao, B. Liu, Y. Pan et al.. Effect of rapid thermal annealing on the properties of InN epilayers［J］. J. Kor. Phys. Soc., 2008, 52(11): S128～S131