Fig. 1. (a) Schematic diagram of the 4–λ hybrid InGaAsP-Si evanescent laser array (not to scale). (b) Schematic diagram of the InGaAsP/InP MQW DFB laser array (not to scale). (c) Schematic diagram of the SOI substrate with Si waveguides (not to scale). (d) SEM image after selective area metal bonding the InGaAsP/InP MQW DFB laser array to the SOI substrate.

Fig. 2. (a) Effective index and lasing wavelength varying with the III–V ridge waveguide width. (b), (c) Calculated optical field distributions of the hybrid laser with a 2.2-μm-wide III–V ridge waveguide when the alignment errors are 0 μm and 0.5 μm, respectively. (d), (e) Calculated optical field distributions of the hybrid laser with a 2.6-μm-wide III–V ridge waveguide when the alignment errors are 0 μm and 0.5 μm, respectively.

Fig. 3. (a) P−I (solid lines) and V−I (dotted lines) curves of the 4–λ hybrid InGaAsP-Si evanescent laser array measured under CW operation at 25°C. (b) Natural log of Ith as a function of the operating temperature for the 4–λ hybrid InGaAsP-Si evanescent laser array.

Fig. 4. Tests were carried out under CW operation of 20 mA at 25°C. (a) Spectral characteristics of the 4–λ hybrid InGaAsP-Si evanescent laser array. Inset is the lasing spectra over a 100 nm span. (b) SMSRs of the lasing wavelengths before and after bonding.

Fig. 5. SMSRs of the 4–λ hybrid InGaAsP-Si evanescent laser array measured under CW operation. (a) SMSR versus the injection current, measured at 25°C. (b) SMSR versus the operating temperature, measured at 20 mA.