Photonics Research, Volume. 7, Issue 6, 687(2019)

4λ hybrid InG

Yajie Li1,2,3, Hongyan Yu1,2,3,4, Wengyu Yang1,2,3, Chaoyang Ge5, Pengfei Wang1,2,3, Fangyuan Meng1,2,3, Guangzhen Luo1,2,3, Mengqi Wang1,3, Xuliang Zhou1,3, Dan Lu1,2,3, Guangzhao Ran5, and Jiaoqing Pan1,2,3,6
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
  • 4e-mail: hyyu09@semi.ac.cn
  • 5State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 6e-mail: jqpan@semi.ac.cn
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    Yajie Li, Hongyan Yu, Wengyu Yang, Chaoyang Ge, Pengfei Wang, Fangyuan Meng, Guangzhen Luo, Mengqi Wang, Xuliang Zhou, Dan Lu, Guangzhao Ran, Jiaoqing Pan, "4λ hybrid InG," Photonics Res. 7, 687 (2019)

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    Paper Information

    Category: Silicon Photonics

    Received: Feb. 18, 2019

    Accepted: Apr. 8, 2019

    Published Online: Jun. 4, 2019

    The Author Email:

    DOI:10.1364/PRJ.7.000687

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