Optoelectronic Technology, Volume. 43, Issue 1, 1(2023)

(100) and (111) Selective De⁃substrate Technology after Whole⁃sheet Bonding of Silicon⁃based Metals

Jiayi DU1, Junyang NIE4, Jie SUN1,3, Chang LIN2, Dalei WU2, Tianxi YANG2, Zhonghang HUANG1, and Qun YAN2
Author Affiliations
  • 1National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 35000, CHN
  • 2Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350100, CHN
  • 3Quantum Device Physics Laboratory, Chalmers University of Technology, Göteborg41296, Sweden
  • 4Faculty of Electronic and Information Engineering, Xi’an Jiaotong University,Xi’an71009, CHN
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    Figures & Tables(6)
    Process steps for silicon-based metal wafer bonding followed by selective de-substrate technology
    AFM images of wafer surface
    Schematic of the pyramidal structure formed by coarsening
    SEM images of surface roughening
    Etching rate
    • Table 1. Surface area of pyramidal structures formed at different roughening times

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      Table 1. Surface area of pyramidal structures formed at different roughening times

      粗化时间/mina/µmb/µmh/µmS/µm2
      20~10.4~5.9~2.5~107.9
      30~36.9~16.8~7.6~1 201.7
      40~32.9~13.7~6.0~846.9
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    Jiayi DU, Junyang NIE, Jie SUN, Chang LIN, Dalei WU, Tianxi YANG, Zhonghang HUANG, Qun YAN. (100) and (111) Selective De⁃substrate Technology after Whole⁃sheet Bonding of Silicon⁃based Metals[J]. Optoelectronic Technology, 2023, 43(1): 1

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    Paper Information

    Category: Research and Trial-manufacture

    Received: Sep. 8, 2022

    Accepted: --

    Published Online: Apr. 14, 2023

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2023.01.001

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