Analysis of Tunneling Current Characteristics in the THz-STM Based on Simmons Model

Jian-xiong YU; Yu-lun HE; Bin HUAN; Xiang LIU; Hai-wei DU

doi:10.3969/j.issn.1672-8785.2025.08.003

INFRARED, Volume. 46, Issue 8, 13(2025)

Analysis of Tunneling Current Characteristics in the THz-STM Based on Simmons Model

Jian-xiong YU¹, Yu-lun HE¹, Bin HUAN¹, Xiang LIU¹, and Hai-wei DU^1,2、*

Author Affiliations

¹School of Instrument Science and Optoelectronic Engineering, Nanchang Hangkong University, Nanchang 330063, China

²Key Laboratory of Nondestructive Testing, Ministry of Education, Nanchang 330063, China

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YU Jian-xiong, HE Yu-lun, HUAN Bin, LIU Xiang, DU Hai-wei. Analysis of Tunneling Current Characteristics in the THz-STM Based on Simmons Model[J]. INFRARED, 2025, 46(8): 13

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Paper Information

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Received: Dec. 24, 2024

Accepted: Sep. 12, 2025

Published Online: Sep. 12, 2025

The Author Email: DU Hai-wei (haiweidu@nchu.edu.cn)

DOI:10.3969/j.issn.1672-8785.2025.08.003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology