Fig. 1. (a) Schematic diagram of the 4H-SiC p-i-n detector. (b) Photograph of the packaged device. (c) Dark I–V characteristics and (d) C–V characteristics of the detector at room temperature.

Fig. 2. (a) Schematic of the resistor-capacitor feedback CSA circuit. (b) Schematic of the reset CSA circuit. AMP, amplifier.

Fig. 3. Time-domain voltage evolution on the capacitor as a result of the detector’s leakage current and active switch turning on.

Fig. 4. A transient output signal as a result of a single soft X-ray photon incidence with a characteristic energy of 5.89 keV.

Fig. 5. (a) FWHM at 5.89 keV (characteristic energy) versus shaping time of the pulse shaping unit. (b) Energy resolution of the 4H-SiC soft X-ray single photon detectors under different characteristic energies.