[1] Gu R, Lei W, Antoszewski J et al. Investigation of substrate effects on interface strain and defect generation in MBE-grown HgCdTe[J]. Journal of Electronic Materials, 45, 4596-4602(2016).

[2] Sheng F, Zhou C, Sun S et al. Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe liquid-phase epitaxy materials[J]. Journal of Electronic Materials, 43, 1397-1402(2014).

[3] Liu H, Li S, Sun P et al. Study on characterization method of optical constants of germanium thin films from absorption to transparent region[J]. Materials Science in Semiconductor Processing, 83, 58-62(2018).

[4] Bakovets V V, Yushina I V, Antonova O V et al. Bandgap-width correction for luminophores CaMoO4 and CaWO4[J]. Optics and Spectroscopy, 123, 399-403(2017).

[5] Yan B, Chen X R, Zhu L Q et al. Bismuth-induced band-tail states in GaAsBi probed by photoluminescence[J]. Applied Physics Letters, 114, 052104(2019).

[6] Chen X R, Song Y X, Zhu L et al. Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence[J]. Journal of Applied Physics, 113, 153505(2013).

[7] Taliercio T, Intartaglia R, Gil B et al. From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction[J]. Physical Review B, 69, 073303(2004).

[8] Chen X R, Zhu L Q, Shao J. Spatially resolved and two-dimensional mapping modulated infrared photoluminescence spectroscopy with functional wavelength up to 20μm[J]. Review of Scientific Instruments, 90, 093106(2019).

[9] Chen X R, Wu X Y, Yue L et al. Negative thermal quenching of below-bandgap photoluminescence in InPBi[J]. Applied Physics Letters, 110, 051903(2017).

[10] Schmidt T, Labar J L, Falk F. TEM analysis of Si thin films prepared by diode laser induced solid phase epitaxy at high temperatures[J]. Materials Letters, 122, 37-40(2014).

[11] Yu S J, Asahi H, Emura S et al. Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures[J]. Journal of Applied Physics, 70, 204(1991).

[12] Wu C Y, Lao P D, Shen S C. Raman scattering from InxGa1-xAs/GaAs strained-layer superlattices[J]. Applied Physics Letters, 58, 1491-1493(1991).

[13] Scrutton P, Fung B, Helmy A S. Effect of intermixing on bulk and interface Raman modes in GaAs:AlAs superlattice waveguide structures[J]. Journal of Applied Physics, 104, 073103(2008).

[14] Dietrich B, Bukalo V, Fischer A et al. Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devices[J]. Applied Physics Letters, 82, 1176-1178(2003).

[15] Jamison S A, Nurmikko A V. Avalanche formation and high-intensity infrared transmission limit in InAs, InSb, and Hg1-xCdxTe[J]. Physical Review B, 19, 5185-5193(1979).

[16] Kuzmany H[M]. Solid-State Spectroscopy: An Introduction(2011).

[17] Maltsev A A, Maltsev M A. Procedure for measuring the sensitivity of precision detectors of visible and infrared synchrotron radiation[J]. Measurement Techniques, 38, 1194-1198(1995).

[18] Smith B C[M]. Fundamentals of Fourier Transform Infrared Spectroscopy, Second Edition, 4-13(2011).

[19] Shao J, Lu W, Lu X et al. Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer[J]. Review of Scientific Instruments, 77, 63104(2006).

[20] Shao J, Lu W, Yue F et al. Photoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: Technique and applications[J]. Review of Scientific Instruments, 78, 013111(2007).

[21] Shao J, Chen L, Lu W et al. Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs[J]. Applied Physics Letters, 96, 121915(2010).

[22] Yuan H, Apgar G, Kim J et al. FPA development: from InGaAs, InSb, to HgCdTe[C], 6940, 69403C(2008).

[23] GilesTaylor N C, Bicknell R N, Blanks D K et al. Photoluminescence of CdTe: A comparison of bulk and epitaxial material[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 3, 76(1985).

[24] Leo G, Longo M, Lovergine N et al. Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy[J]. Journal of Vacuum Science & Technology B, 14, 1739-1744(1996).

[25] Gu Y, Zheng H J, Chen X R et al. Influence of surface structures on quality of CdTe(100) thin films grown on GaAs(100) substrates[J]. Chinese Physics Letters, 35, 086801(2018).

[26] Mooradian A, Wright G B. Observation of the interaction of plasmons with longitudinal optical phonons in GaAs[J]. Physical Review Letters, 16, 999-1001(1966).

[27] Rowe J M, Nicklow R M, Price D L et al. Lattice dynamics of cadmium telluride[J]. Physical Review B, 10, 671-675(1974).

[28] Zhu S X, Qiu W Y, Wang H et al. Raman spectroscopic determination of hole concentration in undoped GaAsBi[J]. Semiconductor Science and Technology, 34, 015008(2019).

[29] Erol A, Akalin E, Kara K et al. Raman and AFM studies on nominally undoped, p- and n-type GaAsBi alloys[J]. Journal of Alloys and Compounds, 722, 339-343(2017).

[30] Prando G A, Gordo V O, Puustinen J et al. Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates[J]. Semiconductor Science and Technology, 33, 084002(2018).

[31] Duan Y, Kong J F, Shen W Z. Raman investigation of silicon nanocrystals: quantum confinement and laser-induced thermal effects[J]. Journal of Raman Spectroscopy, 43, 756-760(2012).

[32] Bakali E, Selamet Y, Tarhan E et al. Effect of Annealing on the density of defects in epitaxial CdTe (211)/GaAs[J]. Journal of Electronic Materials, 47, 4780-4792(2018).

[33] Zhao K, Wang W, Yang Y Y et al. From Taylor cone to solid nanofiber in tri-axial electrospinning: Size relationships[J]. Results in Physics, 15, 102770(2019).