Journal of Infrared and Millimeter Waves, Volume. 40, Issue 1, 50(2021)
Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films
Fig. 1. Schematic of FT Raman measurement. Inset: spatial intensity profile of the 1064 nm pumping light at the confocal point measured by an optical beam profiler
Fig. 2. PL spectra of CdTe/GaAs thin film and GaAs substrate at 77 K. Blue line: zoomed-in of the partial PL spectrum
Fig. 3. FT infrared Raman spectra of CdTe/GaAs thin film and GaAs substrate. Inset: normalized local Raman spectra of LO phonon
Fig. 4. FT infrared Raman spectra of CdTe/GaAs thin film at different excitation power . Inset: evolutions of FWHM(a) and Raman Intensity(b) with excitation power
Fig. 5. Raman spectra of CdTe/GaAs thin film measured by (a)visible Raman spectra at 514 nm; (b) FT infrared Raman spectra at 1064 nm
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Wei WANG, Xi-Ren CHEN, Deng-Guang YU, Jun SHAO. Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 50
Category: Research Articles
Received: Feb. 2, 2020
Accepted: --
Published Online: Aug. 30, 2021
The Author Email: Deng-Guang YU (ydg017@usst.edu.cn), Jun SHAO (jshao@mail.sitp.ac.cn)