Journal of Infrared and Millimeter Waves, Volume. 40, Issue 1, 50(2021)

Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films

Wei WANG1,2, Xi-Ren CHEN2, Deng-Guang YU1、*, and Jun SHAO2、**
Author Affiliations
  • 1School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
  • 2State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    Figures & Tables(5)
    Schematic of FT Raman measurement. Inset: spatial intensity profile of the 1064 nm pumping light at the confocal point measured by an optical beam profiler
    PL spectra of CdTe/GaAs thin film and GaAs substrate at 77 K. Blue line: zoomed-in of the partial PL spectrum
    FT infrared Raman spectra of CdTe/GaAs thin film and GaAs substrate. Inset: normalized local Raman spectra of LO phonon
    FT infrared Raman spectra of CdTe/GaAs thin film at different excitation power . Inset: evolutions of FWHM(a) and Raman Intensity(b) with excitation power
    Raman spectra of CdTe/GaAs thin film measured by (a)visible Raman spectra at 514 nm; (b) FT infrared Raman spectra at 1064 nm
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    Wei WANG, Xi-Ren CHEN, Deng-Guang YU, Jun SHAO. Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 50

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    Paper Information

    Category: Research Articles

    Received: Feb. 2, 2020

    Accepted: --

    Published Online: Aug. 30, 2021

    The Author Email: Deng-Guang YU (ydg017@usst.edu.cn), Jun SHAO (jshao@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2021.01.009

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