Properties of 620 nm Semiconductor Lasers with Ge/SixGe1-x Substrate

Tao Lin; Jianan Xie; Yan Mu; Yaning Li; Wanjun Sun; Xiaxia Zhang; Sha Yang; Shuai Mi

doi:10.3788/LOP202259.1914003

Laser & Optoelectronics Progress, Volume. 59, Issue 19, 1914003(2022)

Properties of 620 nm Semiconductor Lasers with Ge/Si_xGe_1-_x Substrate

Tao Lin^1,2、*, Jianan Xie¹, Yan Mu¹, Yaning Li¹, Wanjun Sun¹, Xiaxia Zhang¹, Sha Yang¹, and Shuai Mi¹

Author Affiliations

¹College of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, Shaanxi, China

²Shaanxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi'an University of Technology, Xi'an 710048, Shaanxi, China

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Figures & Tables(15)

$Band gap energy and laser wavelength of GaInP materials with different Ga mole fractions. (a) Band gap energy; (b) laser wavelength$

Fig. 1. Band gap energy and laser wavelength of GaInP materials with different Ga mole fractions. (a) Band gap energy; (b) laser wavelength

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$Coefficients A and B for GaInP materials with different Ga mole fractions$

Fig. 2. Coefficients A and B for GaInP materials with different Ga mole fractions

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Fig. 3. Lattice constants of different materials. (a) SiGe; (b) GaInP, AlInP; (c) AlGaInP

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Fig. 4. Expansion coefficients of SiGe and GaInP materials. (a) SiGe; (b) GaInP

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Fig. 5. Variation curve of different lattice constants with temperature

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Fig. 6. Optical power and conversion efficiency of 640 nm semiconductor laser

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Fig. 7. Output characteristics of 620 nm semiconductor laser on Ge/Si_xGe_1-_x substrate

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Fig. 8. Variation curve of Ga_0.57In_0.43P band gap with temperature

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Fig. 9. Output characteristics of different quantum well structures

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Fig. 10. Peak gain and I-P curve for five structures. (a) Peak gain; (b) I-P curve

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Table 1. Lattice constants of Si, Ge, GaP, InP and AlP materials
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Table 1. Lattice constants of Si, Ge, GaP, InP and AlP materials
Material Si Ge GaP InP AlP
Lattice constants /nm 0.5431 0.5658 0.5451 0.5869 0.5464

Table 2. Expansion coefficients α for Si, Ge, GaP, InP and AlP
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Table 2. Expansion coefficients α for Si, Ge, GaP, InP and AlP
Material Si Ge GaP InP AlP
α /K^-1 2.60×10^-6 5.91×10^-6 9.16×10^-7 5.05×10^-6 9.16×10^-7

Table 3. Expansion coefficients of materials
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Table 3. Expansion coefficients of materials
Material Ge Si_0.12Ge_0.88 Ga_0.57In_0.43P Al_0.588In_0.412P Al_0.180Ga_0.395In_0.425P
α /K^-1 5.91×10^-6 5.51×10^-6 2.69×10^-6 2.62×10^-6 2.67×10^-6

Table 4. Parameters and output characteristics of different GaInP quantum wells
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Table 4. Parameters and output characteristics of different GaInP quantum wells
Structure 1 2 3 4
Mole fraction of Ga 0.55 0.56 0.57 0.58
Lattice constant /nm 0.5638 0.5634 0.5630 0.5626
QW thickness /nm 4 5.2 7 10
Threshold current /A 0.77 0.67 0.58 0.62
Conversion efficiency /% 28.1 34.4 38.3 37.3

Table 5. Simulation results for different QW strain structures

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Table 5. Simulation results for different QW strain structures

Structure	1	2	3	4	5
Mole fraction of Si	0.08	0.1	0.12	0.16	0.18
QW strain /%	0.16（tensile）	0.09（tensile）	0	0.16（compressive）	0.23（compressive）
QW thickness /nm	5.6	6.2	7	9.5	10
Peak gain /cm^-1	3127	3230	4035	3141	3149
Threshold current /A	0.68	0.64	0.58	0.61	0.65
Conversion efficiency /%	32.1	35.2	38.3	37.1	34.4

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Tao Lin, Jianan Xie, Yan Mu, Yaning Li, Wanjun Sun, Xiaxia Zhang, Sha Yang, Shuai Mi. Properties of 620 nm Semiconductor Lasers with Ge/Si_xGe_1-_x Substrate[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1914003

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