Properties of 620 nm Semiconductor Lasers with Ge/SixGe1-x Substrate

Tao Lin; Jianan Xie; Yan Mu; Yaning Li; Wanjun Sun; Xiaxia Zhang; Sha Yang; Shuai Mi

doi:10.3788/LOP202259.1914003

Laser & Optoelectronics Progress, Volume. 59, Issue 19, 1914003(2022)

Properties of 620 nm Semiconductor Lasers with Ge/Si_xGe_1-_x Substrate

Tao Lin^1,2、*, Jianan Xie¹, Yan Mu¹, Yaning Li¹, Wanjun Sun¹, Xiaxia Zhang¹, Sha Yang¹, and Shuai Mi¹

Author Affiliations

¹College of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, Shaanxi, China

²Shaanxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi'an University of Technology, Xi'an 710048, Shaanxi, China

show less

Abstract Get PDF(in Chinese)

Cited By

Article index updated: Mar. 15, 2025

The article is cited by 2 article(s) CLP online library. (Some content might be in Chinese.)

Tools

Get Citation

Copy Citation Text

Tao Lin, Jianan Xie, Yan Mu, Yaning Li, Wanjun Sun, Xiaxia Zhang, Sha Yang, Shuai Mi. Properties of 620 nm Semiconductor Lasers with Ge/Si_xGe_1-_x Substrate[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1914003

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Lasers and Laser Optics

Received: Aug. 23, 2021

Accepted: Oct. 8, 2021

Published Online: Sep. 23, 2022

The Author Email: Lin Tao (lintao@xaut.edu.cn)

DOI:10.3788/LOP202259.1914003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology