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Semiconductor Optoelectronics, Volume. 46, Issue 4, 624(2025)

Preparation and Mechanism of Thin-Film Transistors Based on a New Tantalum-Doped HfO2 Dielectric Layer

LIU Yu1, HU Mengzhen1, SONG Zengcai1, and ZHANG Dong2
Author Affiliations
  • 1School of Physics and Electronics, North China University of Water Resources and Electric Power, Zhengzhou 450046, CHN
  • 2School of Physics and Technology, Wuhan University, Wuhan 430072, CHN
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    LIU Yu, HU Mengzhen, SONG Zengcai, ZHANG Dong. Preparation and Mechanism of Thin-Film Transistors Based on a New Tantalum-Doped HfO2 Dielectric Layer[J]. Semiconductor Optoelectronics, 2025, 46(4): 624

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    Received: Apr. 15, 2025

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20250415003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology