Infrared and Laser Engineering, Volume. 50, Issue 11, 20210083(2021)

Design of 1 280×1 024 vertical antiblooming EMCCD

Yuanjin Chen1,2, Weijing Chang2, Qingfei Liu2, Fang Dai2, and Lingxue Wang1
Author Affiliations
  • 1School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
  • 2East China Institute of Optoelectronic Integrated Device, Suzhou 215163, China
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    Figures & Tables(8)
    Vertical antiblooming structure of EMCCD
    1280 × 1024 EMCCD structure design. (a) 1280 × 1024 EMCCD device structure; (b) Simplified pixel structure with antiblooming function; (c) Pixel two-dimensional model
    (a) Pixel integration and (b) pixel antiblooming
    Cross-section of 1280×1024 EMCCD pixel
    Designed 1280×1024 EMCCD. (a) Scanning electron microscope of pixel; (b) Packaged device
    Antiblooming factor curve of EMCCD as a function of substrate voltage
    1280 × 1024 EMCCD principle prototype
    Imaging effect of EMCCD antiblooming. (a)-(h) Antiblooming off; (i)-(l) Antiblooming on
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    Yuanjin Chen, Weijing Chang, Qingfei Liu, Fang Dai, Lingxue Wang. Design of 1 280×1 024 vertical antiblooming EMCCD[J]. Infrared and Laser Engineering, 2021, 50(11): 20210083

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    Paper Information

    Category: Optical design

    Received: Feb. 1, 2021

    Accepted: --

    Published Online: Dec. 7, 2021

    The Author Email:

    DOI:10.3788/IRLA20210083

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