Chinese Journal of Lasers, Volume. 25, Issue 1, 37(1998)

Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2Department of Electrical Engineering, University of Delaware, Newark USA
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    References(5)

    [1] [1] H. Tsuchida, M. Ohtsu, T. Tako. Frequency stabilization of AlGaAs semiconductor laser to the absorption line of water vapor. Jpn. J. Appl. Phys., 1982, 21(1):L1~L3

    [2] [2] S. Yamaguchi, M. Suzuki. Frequency locking of an InGaAsP semiconductor laser to the first overtone vibration-rotation lines of hydrogen fluoride. Appl. Phys. Lett., 1982, 41(11):1034~1036

    [3] [3] T. Iabuzaki, A. Ibaragi, H. Hori et al.. Frequency-locking of a GaAlAs laser to a Doppler-free spectrum of Cs-D2 line. Jpn. J. Appl. Phys., 1981, 20(6):L451~L454

    [4] [4] S. Yamaguchi, M. Suzuki. Simultaneous stabilization of the frequency and power of an AlGaAs semiconductor laser by use of the optogalvanic effect of krypton. IEEEJ. Quant. Electr., 1983, QE-19(10):1514~1519

    [5] [5] Y. Sakai, I. Yokohama, T. Kominato et al.. Frequency stabilization of laser diode using a frequency-locked ring resonator to acelylene gas absoption lines. IEEE Photon. Technol. Lett., 1991, 3(10):868~870

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell[J]. Chinese Journal of Lasers, 1998, 25(1): 37

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    Paper Information

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    Received: Jul. 25, 1996

    Accepted: --

    Published Online: Oct. 18, 2006

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