Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Journal of Lasers, Volume. 25, Issue 1, 37(1998)

Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2Department of Electrical Engineering, University of Delaware, Newark USA
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (0)
    Equations (0)
    References (5)
    Tools
    Paper Information
    Topics
    Cited By

    Article index updated: Mar. 11, 2025

    The article is cited by 5 article(s) CLP online library. (Some content might be in Chinese.)
    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell[J]. Chinese Journal of Lasers, 1998, 25(1): 37

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category:

    Received: Jul. 25, 1996

    Accepted: --

    Published Online: Oct. 18, 2006

    The Author Email:

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology