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Acta Physica Sinica, Volume. 69, Issue 13, 138501-1(2020)

Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystal

Ze Long, Xiao-Chuan Xia, Jian-Jun Shi, Jun Liu, Xin-Lei Geng, He-Zhi Zhang, and Hong-Wei Liang*
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  • School of Microelectronics, Dalian University of Technology, Dalian 116024, China
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    Ze Long, Xiao-Chuan Xia, Jian-Jun Shi, Jun Liu, Xin-Lei Geng, He-Zhi Zhang, Hong-Wei Liang. Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystal [J]. Acta Physica Sinica, 2020, 69(13): 138501-1

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    Received: Mar. 20, 2020

    Accepted: --

    Published Online: Jan. 4, 2021

    The Author Email:

    DOI:10.7498/aps.69.20200424

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology