Fig. 1. (a), (b), (c) Mechanically exfoliated beta-Ga₂O₃ single crystal; (d) schematic cross section of Au/Ni/β-Ga₂O₃ Schottky barrier diode.

Fig. 2. Temperature dependent I-V characteristic curves of Schottky barrier diode: (a) Forward curves; (b) reverse curves.

Fig. 3. The parameters from temperature dependent I-V characteristic curves: (a)Barrier height; (b) ideal factor; (c) threshold voltage.

Fig. 4. Plot of barrier height as a function of ideal factor obtained at various temperatures: (a) Barrier 1; (b) Barrier 2

Fig. 5. (a) C-V characteristic curves; (b) 1/C²-V characteristic curve of 100 kHz.

Fig. 6. dV/dlnI-V curve at the temperature of 300 K.

Fig. 7. H(I)-I (a) Temperature dependent curves; (b) the resistance and barrier height at various temperatures.

Fig. 8. (a) F(V)-V temperature dependent curves; (b) the resistance and barrier height at various temperatures.

Fig. 9. Richardson's plot of Schottky barrier diode.

Fig. 10. (a) The plot of ; (b) Richardson's plot after Gaussian distribution processing.