<trans-title xml:lang="en">Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga<sub>2</sub>O<sub>3</sub> single crystal </trans-title>

Ze Long; Xiao-Chuan Xia; Jian-Jun Shi; Jun Liu; Xin-Lei Geng; He-Zhi Zhang; Hong-Wei Liang

doi:10.7498/aps.69.20200424

Acta Physica Sinica, Volume. 69, Issue 13, 138501-1(2020)

Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga₂O₃ single crystal

Ze Long... Xiao-Chuan Xia, Jian-Jun Shi, Jun Liu, Xin-Lei Geng, He-Zhi Zhang and Hong-Wei Liang* |Show fewer author(s)

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School of Microelectronics, Dalian University of Technology, Dalian 116024, China

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Ze Long, Xiao-Chuan Xia, Jian-Jun Shi, Jun Liu, Xin-Lei Geng, He-Zhi Zhang, Hong-Wei Liang. Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga₂O₃ single crystal [J]. Acta Physica Sinica, 2020, 69(13): 138501-1

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Received: Mar. 20, 2020

Accepted: --

Published Online: Jan. 4, 2021

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DOI:10.7498/aps.69.20200424

Topics

Nuclear physics

Particles and fields

Particle and nuclear astrophysics and cosmology

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