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Journal of Synthetic Crystals, Volume. 49, Issue 11, 2128(2020)

Progress in Homoepitaxial Growth of 4HSiC Semiconductor

FENG Gan, SUN Yongqiang, QIAN Weining, and CHEN Zhixia
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    FENG Gan, SUN Yongqiang, QIAN Weining, CHEN Zhixia. Progress in Homoepitaxial Growth of 4HSiC Semiconductor[J]. Journal of Synthetic Crystals, 2020, 49(11): 2128

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    Received: --

    Accepted: --

    Published Online: Jan. 26, 2021

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    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology