Journal of Infrared and Millimeter Waves, Volume. 40, Issue 6, 715(2021)

InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer

Yu-Qiang GU1,2, Ming TAN2, Yuan-Yuan WU2, Jian-Ya LU2, Xue-Fei LI1,2, and Shu-Long LU2、*
Author Affiliations
  • 1Institute of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China
  • 2Key Laboratory of Nano-devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
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    References(21)

    [3] Bertone N, Clark W. Avalanche photodiode arrays provide versatility in ultrasensitive applications[J]. Laser Focus World, 43, 69(2007).

    [7] LI Yong-Fu, LIU Jun-Liang, WANG Qing-Pu et al. Avalanche characterization of high speed single-photon detector based on InGaAs/InP APD[J]. J.Infrared Millim.Waves, 34, 427-431(2015).

    [8] LI Bin, CHEN Wei, HUANG Xiao-Feng et al. InP cap layer doping density in InGaAs/InP single-photon avalanche diode[J]. J.Infrared Millim.Waves, 36, 420-424(2017).

    [17] Parks J W, Brennan K F, Tarof L E J V D. Macroscopic device simulation of InGaAs/InP based avalanche photodiodes[J], 6, 79-82(2014).

    [19] Matsushima Y, Sakai K, Noda Y J I E D L. New type InGaAs/InP heterostructure avalanche photodiode with buffer layer[J], 2, 179-181(2005).

    [21] CHENG Yu-Shun, GUO Hui-Jun, LI Hao et al. Device design pf planner PIN HgCdTe avalanche photodiode[J]. J.Infrared Millim.Waves, 39, 8-14(2020).

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    Yu-Qiang GU, Ming TAN, Yuan-Yuan WU, Jian-Ya LU, Xue-Fei LI, Shu-Long LU. InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 715

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    Paper Information

    Category: Research Articles

    Received: Apr. 9, 2021

    Accepted: --

    Published Online: Feb. 16, 2022

    The Author Email: Shu-Long LU (sllu2008@sinano.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2021.06.002

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