Journal of Infrared and Millimeter Waves, Volume. 40, Issue 6, 715(2021)
InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer
[3] Bertone N, Clark W. Avalanche photodiode arrays provide versatility in ultrasensitive applications[J]. Laser Focus World, 43, 69(2007).
[7] LI Yong-Fu, LIU Jun-Liang, WANG Qing-Pu et al. Avalanche characterization of high speed single-photon detector based on InGaAs/InP APD[J]. J.Infrared Millim.Waves, 34, 427-431(2015).
[8] LI Bin, CHEN Wei, HUANG Xiao-Feng et al. InP cap layer doping density in InGaAs/InP single-photon avalanche diode[J]. J.Infrared Millim.Waves, 36, 420-424(2017).
[17] Parks J W, Brennan K F, Tarof L E J V D. Macroscopic device simulation of InGaAs/InP based avalanche photodiodes[J], 6, 79-82(2014).
[19] Matsushima Y, Sakai K, Noda Y J I E D L. New type InGaAs/InP heterostructure avalanche photodiode with buffer layer[J], 2, 179-181(2005).
[21] CHENG Yu-Shun, GUO Hui-Jun, LI Hao et al. Device design pf planner PIN HgCdTe avalanche photodiode[J]. J.Infrared Millim.Waves, 39, 8-14(2020).
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Yu-Qiang GU, Ming TAN, Yuan-Yuan WU, Jian-Ya LU, Xue-Fei LI, Shu-Long LU. InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 715
Category: Research Articles
Received: Apr. 9, 2021
Accepted: --
Published Online: Feb. 16, 2022
The Author Email: Shu-Long LU (sllu2008@sinano.ac.cn)