Journal of Infrared and Millimeter Waves, Volume. 40, Issue 6, 715(2021)
InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer
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Fig. 2. （a）The 3-dB bandwidth vs multiplication factor with different multiplication layer thickness，and （b）the gain-bandwidth product vs multiplication layer thickness
Fig. 3. Distribution of electric field as a function of multiplication layer thickness
Fig. 4. （a）Measured and Calculated I-V characteristic，（b）multiplication gain vs voltage，and （c）C-V characteristic of the InAlAs/InGaAs APD
Fig. 6. （a）Measured and Calculated frequency characteristic，and （b）3-dB bandwidth vs multiplication gain of fabricated InAlAs/InGaAs APD
Table 1. Material parameters used in SILVACO physical modeling
View tableView in ArticleTable 1. Material parameters used in SILVACO physical modeling
Parameters Units InGaAs InAlAs Band gap eV 0.75 1.42 Align 0.36 0.36 Permittivity 13.9 12.2 Electron SRH lifetime s 4×10-8 1×10-18 Hole SRH lifetime s 4×10-8 1×10-18 Electron mobility cm2/V·s 10 000 3 000 Hole mobility cm2/V·s 150 250 Radiative recombination coefficient cm3/s 9.6×10-1 1.2×10-10
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Yu-Qiang GU, Ming TAN, Yuan-Yuan WU, Jian-Ya LU, Xue-Fei LI, Shu-Long LU. InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 715
Paper Information
Category: Research Articles
Received: Apr. 9, 2021
Accepted: --
Published Online: Feb. 16, 2022
The Author Email: Shu-Long LU (sllu2008@sinano.ac.cn)
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