INFRARED, Volume. 46, Issue 7, 32(2025)

Study on the Influence of Indium Oxide on Flip-Chip Interconnect Quality and Its Removal Method

Hui WANG*, Xiao-yu FENG, Tian OUYANG, and Teng-da MA
Author Affiliations
  • North China Research Institute of Electro-Optics, Beijing 100015, China
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    References(4)

    [3] [3] Huang Y, Lin C, Ye Z H, et al. Reflow flip-chip bonding technology for infrared detectors[J].Journal of Micromechanics and Microengineering, 2015,25(8): 1-6.

    [4] [4] Liao G, Du L, Su L, et al. Using RBF networks for detection and prediction of flip chip with missing bumps[J].Microelectronics Reliability, 2015,55: 2817-2825.

    [8] [8] Kim Y H, Choi J H, Choietc K S. New Reflow Process for Indium Bump[C].SPIE, 1997,3061: 60-67.

    [10] [10] Chu K, Lee J, Cho H, et al. Characteristics of Indium Bump for Flip-Chip Bonding Used in Polymeric-Waveguide Integrated Optical Interconnection Systems[J].Japanese Journal of Applied Physics, 2004,43(8): 5922-5927.

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    WANG Hui, FENG Xiao-yu, OUYANG Tian, MA Teng-da. Study on the Influence of Indium Oxide on Flip-Chip Interconnect Quality and Its Removal Method[J]. INFRARED, 2025, 46(7): 32

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    Paper Information

    Category:

    Received: Oct. 20, 2024

    Accepted: Aug. 12, 2025

    Published Online: Aug. 12, 2025

    The Author Email: WANG Hui (wh19800356080@163.com)

    DOI:10.3969/j.issn.1672-8785.2025.07.005

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