Indium bumps (i.e. indium balls) used in flip-chip interconnection technology are a material used to achieve electrical connection between chips and substrates in semiconductor packaging. If the indium columns are left for too long after wet shrinkage, oxides will form on the surface of the indium balls. Indium oxides can be quickly identified using a metallographic microscope. The influence of the presence of indium oxides on the pressure and conductivity of flip-chip interconnection is analyzed and discussed, and wet and dry methods are proposed to remove oxides. The parameters of the removal method are quantitatively studied, and the removal effect is tested and analyzed, making the research conclusions more comprehensive and complete. The results show that the detectors after flip-chip interconnection of the circuit with oxides removed by this method have relatively stable performance, laying a good foundation for the preparation of high-quality and high-reliability detectors.