Chinese Journal of Liquid Crystals and Displays, Volume. 38, Issue 8, 1031(2023)

Research progress on crystalline IGZO thin film transistor

Bai-qi JIANG1, Bin LIU1, Xian-wen LIU1, Shuo ZHANG1, Le WENG1, Da-wei SHI2, Jian GUO2, Shun-kang SU2, Qi YAO3, Ce NING3, Guang-cai YUAN3, Feng WANG1, and Zhi-nong YU1、*
Author Affiliations
  • 1School of Optics and Photonics, Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China
  • 2Chongqing BOE Display Technology Co., Ltd., Chongqing 400714, China
  • 3Beijing BOE Display Technology Co., Ltd., Beijing 101520, China
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    References(63)

    [16] KIMIZUKA N, SpinelMOHRI T.. YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3-A2O3-BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1 000 ℃[J]. Journal of Solid State Chemistry, 60, 382-384(1985).

    [38] WANG Z M, ZHANG A, CHEN Y Y et al. Research progress on fundamentals and applications of metal-induced crystallization[J]. Acta Metallurgica Sinica, 56, 66-82(2020).

    [56] SHIMOMURA A, KOYAMA M, ISHIYAMA T et al. Crystallography of excimer laser-crystallized In-Ga-Zn-O film[C], 155-158(2013).

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    Bai-qi JIANG, Bin LIU, Xian-wen LIU, Shuo ZHANG, Le WENG, Da-wei SHI, Jian GUO, Shun-kang SU, Qi YAO, Ce NING, Guang-cai YUAN, Feng WANG, Zhi-nong YU. Research progress on crystalline IGZO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2023, 38(8): 1031

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    Paper Information

    Category: Research Articles

    Received: Apr. 4, 2023

    Accepted: --

    Published Online: Oct. 9, 2023

    The Author Email: Zhi-nong YU (znyu@bit.edu.cn)

    DOI:10.37188/CJLCD.2023-0121

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