Chinese Journal of Liquid Crystals and Displays, Volume. 38, Issue 8, 1031(2023)
Research progress on crystalline IGZO thin film transistor
Fig. 1. Projection of InGaO3(ZnO) crystal structure on the (a) (001) plane and (b) (110) plane; (c) ion coordination of In3+, Ga3+ and Zn2+ in InGaO3(ZnO)[18].
Fig. 2. Crystal structure of InGaO3(ZnO)3, InO6 has common-edged octahedron structure, Zn(1)O4 has tetrahedron structure, and Zn(2)/GaO5 has triangular bicone structure [19].
Fig. 3. (a) InGaO3(ZnO)5 crystal structure; (b, c) Cross-sectional TEM image of InGaO3(ZnO)5 thin films grown on YSZ(111) by reactive solid-phase epitaxy[15].
Fig. 4. Cross-sectional HAADF-STEM images of (a) single-crystal InGaZnO4, (b) CAAC-IGZO film and (c) InGaZnO4 model[18].
Fig. 5. (a) TEM image of CAAC-IGZO thin film; (b) Enlarged image of (a) surface part; (c) Inverse Fourier transform image reconstructed from (b)[24].
Fig. 6. (a) Magnified image of a boundary region in Fig.5 (b); (b) Enlarged boundary region; (c) FFT analysis of circular region[24].
Fig. 7. Out-of-plane XRD spectra of the CAAC-IGZO at (a)100 ℃, (b)200 ℃, (c)300 ℃ and (d) 400 ℃. Oxygen flow ratios are shown in the graphs[18].
Fig. 8. FWHM relationship between XRD diffraction peak intensity and χ direction at different (a) substrate temperature and (b) oxygen flow ratio; (c) Schematic diagram of the structural phase of IGZO, where the x-axis is the XRD intensity and the y-axis is the FWHM value in the χ direction [28].
Fig. 9. Relationship between threshold voltage change and stress time in (a) HCS,(b) PBS and (c) PBTS tests of a-IGZO, CAAC-IGZO and nc-IGZO; (d) Relationship between a-IGZO and CAAC-IGZO threshold voltage variation and stress action time during NBIS test; Transfer characteristic curves of (e) a-IGZO and (f) CAAC-IGZO TFTS in NBIS tests; Transient light response curves of a-IGZO and CAAC-IGZO TFT under (g) ultraviolet pulse and (h) continuous ultraviolet light irradiation[33].
Fig. 10. (a) Schematic diagram of IGZO crystallization induced by Ta metal layer[42];(b) Transmission electron microscopy image of flash memory device containing Ta/IGZO layer (left), IGZO crystallinity electron diffraction (SEAD) in the selected region (right), Fast Fourier Transform (FFT)(small right figure); (c) XRD patterns of CAAC-IGZO and a-IGZO on Si after annealing at 300 ℃ and O2 for 1 h [45].
Fig. 11. (a) Reference configuration of spinel IGZO with atomic ratio In∶Ga=1∶1, represented in the space group P2221(17), In (pink) and Ga (green) occupy octahedral coordinated sites alternately, Zn (gray) occupies tetrahedral coordinated sites; (b) Polycrystalline spinel IGZO TFT structure; (c) The left image shows the TEM cross-section of the spinel GZO template and the IGZO film deposited on it, the image on the right is the FFT transform image of each specified region; (d) The left figure shows the transfer characteristics of spinel, the spinel with 500 ℃ PDA, amorphous and CAAC IGZO TFT, the graph on the right shows the corresponding field-effect mobility[55].
Fig. 12. Crystal structure of nc-IGZO film, where white is InOx, stripe is GaOy, gray is ZnOz, and white ellipse is mid-range ordered cluster structure[58].
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Bai-qi JIANG, Bin LIU, Xian-wen LIU, Shuo ZHANG, Le WENG, Da-wei SHI, Jian GUO, Shun-kang SU, Qi YAO, Ce NING, Guang-cai YUAN, Feng WANG, Zhi-nong YU. Research progress on crystalline IGZO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2023, 38(8): 1031
Category: Research Articles
Received: Apr. 4, 2023
Accepted: --
Published Online: Oct. 9, 2023
The Author Email: Zhi-nong YU (znyu@bit.edu.cn)