Chinese Journal of Liquid Crystals and Displays, Volume. 38, Issue 8, 1031(2023)

Research progress on crystalline IGZO thin film transistor

Bai-qi JIANG1, Bin LIU1, Xian-wen LIU1, Shuo ZHANG1, Le WENG1, Da-wei SHI2, Jian GUO2, Shun-kang SU2, Qi YAO3, Ce NING3, Guang-cai YUAN3, Feng WANG1, and Zhi-nong YU1、*
Author Affiliations
  • 1School of Optics and Photonics, Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China
  • 2Chongqing BOE Display Technology Co., Ltd., Chongqing 400714, China
  • 3Beijing BOE Display Technology Co., Ltd., Beijing 101520, China
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    Figures & Tables(14)
    Projection of InGaO3(ZnO) crystal structure on the (a) (001) plane and (b) (110) plane; (c) ion coordination of In3+, Ga3+ and Zn2+ in InGaO3(ZnO)[18].
    Crystal structure of InGaO3(ZnO)3, InO6 has common-edged octahedron structure, Zn(1)O4 has tetrahedron structure, and Zn(2)/GaO5 has triangular bicone structure [19].
    (a) InGaO3(ZnO)5 crystal structure; (b, c) Cross-sectional TEM image of InGaO3(ZnO)5 thin films grown on YSZ(111) by reactive solid-phase epitaxy[15].
    Cross-sectional HAADF-STEM images of (a) single-crystal InGaZnO4, (b) CAAC-IGZO film and (c) InGaZnO4 model[18].
    (a) TEM image of CAAC-IGZO thin film; (b) Enlarged image of (a) surface part; (c) Inverse Fourier transform image reconstructed from (b)[24].
    (a) Magnified image of a boundary region in Fig.5 (b); (b) Enlarged boundary region; (c) FFT analysis of circular region[24].
    Out-of-plane XRD spectra of the CAAC-IGZO at (a)100 ℃, (b)200 ℃, (c)300 ℃ and (d) 400 ℃. Oxygen flow ratios are shown in the graphs[18].
    FWHM relationship between XRD diffraction peak intensity and χ direction at different (a) substrate temperature and (b) oxygen flow ratio; (c) Schematic diagram of the structural phase of IGZO, where the x-axis is the XRD intensity and the y-axis is the FWHM value in the χ direction [28].
    Relationship between threshold voltage change and stress time in (a) HCS,(b) PBS and (c) PBTS tests of a-IGZO, CAAC-IGZO and nc-IGZO; (d) Relationship between a-IGZO and CAAC-IGZO threshold voltage variation and stress action time during NBIS test; Transfer characteristic curves of (e) a-IGZO and (f) CAAC-IGZO TFTS in NBIS tests; Transient light response curves of a-IGZO and CAAC-IGZO TFT under (g) ultraviolet pulse and (h) continuous ultraviolet light irradiation[33].
    (a) Schematic diagram of IGZO crystallization induced by Ta metal layer[42];(b) Transmission electron microscopy image of flash memory device containing Ta/IGZO layer (left), IGZO crystallinity electron diffraction (SEAD) in the selected region (right), Fast Fourier Transform (FFT)(small right figure); (c) XRD patterns of CAAC-IGZO and a-IGZO on Si after annealing at 300 ℃ and O2 for 1 h [45].
    (a) Reference configuration of spinel IGZO with atomic ratio In∶Ga=1∶1, represented in the space group P2221(17), In (pink) and Ga (green) occupy octahedral coordinated sites alternately, Zn (gray) occupies tetrahedral coordinated sites; (b) Polycrystalline spinel IGZO TFT structure; (c) The left image shows the TEM cross-section of the spinel GZO template and the IGZO film deposited on it, the image on the right is the FFT transform image of each specified region; (d) The left figure shows the transfer characteristics of spinel, the spinel with 500 ℃ PDA, amorphous and CAAC IGZO TFT, the graph on the right shows the corresponding field-effect mobility[55].
    Crystal structure of nc-IGZO film, where white is InOx, stripe is GaOy, gray is ZnOz, and white ellipse is mid-range ordered cluster structure[58].
    Formation process of protocrystalline IGZO [57]
    • Table 1. Preparation conditions for CAAC-IGZO thin film[18]

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      Table 1. Preparation conditions for CAAC-IGZO thin film[18]

      制备材料及条件参数
      衬底玻璃:600 mm×720 mm,0.7 mm厚
      靶材多晶InGaZnO4
      衬底温度(Tsub200 ℃
      气体流量300 mL/min

      氧流量比([O2]/

      ([Ar]+[O2]))

      20%
      IGZO沉积厚度100 nm
      气压0.6 Pa
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    Bai-qi JIANG, Bin LIU, Xian-wen LIU, Shuo ZHANG, Le WENG, Da-wei SHI, Jian GUO, Shun-kang SU, Qi YAO, Ce NING, Guang-cai YUAN, Feng WANG, Zhi-nong YU. Research progress on crystalline IGZO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2023, 38(8): 1031

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    Paper Information

    Category: Research Articles

    Received: Apr. 4, 2023

    Accepted: --

    Published Online: Oct. 9, 2023

    The Author Email: Zhi-nong YU (znyu@bit.edu.cn)

    DOI:10.37188/CJLCD.2023-0121

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