Silicon carbide（SiC）thin films were successfully deposited on the C-plane of 4H-SiC substrates using plasma-enhanced chemical vapor deposition（PECVD）technology. With the help of field emission scanning electron microscopy（SEM），energy dispersive spectroscopy（EDS），and atomic force microscopy（AFM），the influence of deposition temperature，power and total gas flow rate on film roughness，deposition rate，and carbon-to-silicon ratio was investigated comprehensively. The experimental results show that when the total gas flow rate increases，the deposition rate of the film gradually increases，and carbon-to-silicon atomic ratio also increases accordingly；however，the surface of the film becomes rougher. As power increases，the deposition rate of the film gradually decreases；carbon-to-silicon atomic ratio first increases and then decreases；and film roughness decreases. As temperature increases，the deposition rate of the film gradually decreases，and the atomic ratio of carbon to silicon also gradually decreases，resulting in a decrease in film roughness.